DISCRETE SEMICONDUCTORS
DATA SHEET
dbook, halfpage
M3D088
BAS19; BAS20; BAS21
General purpose diodes
Product data sheet
Supersedes data of 1999 May 26
2003 Mar 20
NXP Semiconductors
Product data sheet
General purpose diodes
FEATURES
•
Small plastic SMD package
•
Switching speed: max. 50 ns
•
General application
•
Continuous reverse voltage: max. 100 V; 150 V; 200 V
•
Repetitive peak reverse voltage: max. 120 V; 200 V;
250 V
•
Repetitive peak forward current: max. 625 mA.
APPLICATIONS
•
General purpose switching in e.g. surface mounted
circuits.
DESCRIPTION
The BAS19, BAS20 and BAS21 are general purpose
diodes fabricated in planar technology, and encapsulated
in a small SOT23 plastic SMD package.
PINNING
PIN
1
2
3
BAS19; BAS20; BAS21
DESCRIPTION
anode
not connected
cathode
handbook, halfpage
2
1
2
n.c.
3
3
MAM185
1
MARKING
TYPE NUMBER
BAS19
BAS20
BAS21
Note
1.
∗
= p: Made in Hong Kong.
∗
= t: Made in Malaysia.
∗
= W: Made in China.
MARKING CODE
(1)
JP∗
JR∗
JS∗
Fig.1 Simplified outline (SOT23) and symbol.
2003 Mar 20
2
NXP Semiconductors
Product data sheet
General purpose diodes
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
RRM
BAS19
BAS20
BAS21
V
R
continuous reverse voltage
BAS19
BAS20
BAS21
I
F
I
FRM
I
FSM
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
see Fig.2; note 1
PARAMETER
repetitive peak reverse voltage
CONDITIONS
BAS19; BAS20; BAS21
MIN.
−
−
−
−
−
−
−
−
MAX.
120
200
250
100
150
200
200
625
V
V
V
V
V
V
UNIT
mA
mA
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 100
µs
t = 10 ms
−
−
−
−
−65
−
9
3
1.7
250
+150
150
A
A
A
mW
°C
°C
P
tot
T
stg
T
j
Note
total power dissipation
storage temperature
junction temperature
T
amb
= 25
°C;
note 1
1. Device mounted on an FR4 printed-circuit board.
2003 Mar 20
3
NXP Semiconductors
Product data sheet
General purpose diodes
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
V
F
PARAMETER
forward voltage
see Fig.3
I
F
= 100 mA
I
F
= 200 mA
I
R
reverse current
BAS19
BAS20
BAS21
C
d
t
rr
diode capacitance
reverse recovery time
see Fig.5
V
R
= 100 V
V
R
= 100 V; T
j
= 150
°C
V
R
= 150 V
V
R
= 150 V; T
j
= 150
°C
V
R
= 200 V
V
R
= 200 V; T
j
= 150
°C
f = 1 MHz; V
R
= 0; see Fig.6
CONDITIONS
BAS19; BAS20; BAS21
MAX.
1
1.25
100
100
100
100
100
100
5
50
V
V
UNIT
nA
µA
nA
µA
nA
µA
pF
ns
when switched from I
F
= 30 mA to
I
R
= 30 mA; R
L
= 100
Ω;
measured at
I
R
= 3 mA; see Fig.8
THERMAL CHARACTERISTICS
SYMBOL
R
th j-tp
R
th j-a
Note
1. Device mounted on an FR4 printed-circuit board.
PARAMETER
thermal resistance from junction to tie-point
thermal resistance from junction to ambient
note 1
CONDITIONS
VALUE
330
500
UNIT
K/W
K/W
2003 Mar 20
4
NXP Semiconductors
Product data sheet
General purpose diodes
GRAPHICAL DATA
MBG442
BAS19; BAS20; BAS21
handbook, halfpage
300
handbook, halfpage
600
IF
MBG384
IF
(mA)
200
(mA)
(1)
(2)
(3)
400
100
200
0
0
100
Tamb
(
o
C)
200
0
0
1
VF (V)
2
Device mounted on an FR4 printed-circuit board.
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of ambient
temperature.
Fig.3
Forward current as a function of forward
voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG703
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
2003 Mar 20
5
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