BCV63 datasheet, PDF - EEWORLD Datasheet

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BCV63: DescriptionTRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size94KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BCV63 Overview

TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal

BCV63 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
package instruction	PLASTIC PACKAGE-4
Contacts	4
Reach Compliance Code	compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	0.1 A
Collector-emitter maximum voltage	30 V
Configuration	CASCADED, 2 ELEMENTS
Minimum DC current gain (hFE)	110
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	2
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.65 V

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BCV63; BCV63B

NPN general-purpose double transistors

Rev. 4 — 4 August 2010

Product data sheet

1. Product profile

1.1 General description

NPN general-purpose double transistors in a small SOT143B Surface-Mounted

Device (SMD) plastic package.

Table 1.

Product overview

Package

NXP

BCV63

BCV63B

SOT143B

JEITA

BCV64B

PNP complement

Type number

1.2 Features and benefits



Low current (max. 100 mA)

Low voltage (max. 30 V and 6 V)

AEC-Q101 qualified

Small SMD plastic package

1.3 Applications



General-purpose switching and amplification



For use in Schmitt trigger applications

1.4 Quick reference data

Table 2.

Symbol

CEO

Quick reference data

Parameter

collector current

collector-emitter voltage

DC current gain

BCV63

BCV63B

open base

= 5 V; I

= 2 mA

110

200

800

450

Conditions

Min

Typ

Max

100

Unit

Per transistor

Transistor TR1

BCV63 Related Products

	BCV63	BCV63B
Description	TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 30 V, 2 CHANNEL, NPN, Si, SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP General Purpose Small Signal
Is it lead-free?	Lead free	Lead free
Is it Rohs certified?	conform to	conform to
Maker	NXP	NXP
package instruction	PLASTIC PACKAGE-4	PLASTIC PACKAGE-4
Contacts	4	4
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.1 A	0.1 A
Collector-emitter maximum voltage	30 V	30 V
Configuration	CASCADED, 2 ELEMENTS	CASCADED, 2 ELEMENTS
Minimum DC current gain (hFE)	110	200
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	2	2
Number of terminals	4	4
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Tin (Sn)	Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	30	30
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz
VCEsat-Max	0.65 V	0.65 V

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