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FP20R06YE3BOMA1

Description
Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23
CategoryDiscrete semiconductor    The transistor   
File Size401KB,12 Pages
ManufacturerEUPEC [eupec GmbH]
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FP20R06YE3BOMA1 Overview

Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23

FP20R06YE3BOMA1 Parametric

Parameter NameAttribute value
MakerEUPEC [eupec GmbH]
package instructionMODULE-23
Reach Compliance Codeunknown
Is SamacsysN
Shell connectionISOLATED
Maximum collector current (IC)27 A
Collector-emitter maximum voltage600 V
ConfigurationCOMPLEX
JESD-30 codeR-XUFM-X23
Number of components7
Number of terminals23
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Transistor component materialsSILICON
Nominal off time (toff)250 ns
Nominal on time (ton)37 ns
Base Number Matches1
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FP20R06YE3BOMA1 Related Products

FP20R06YE3BOMA1 FP20R06YE3
Description Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23 Insulated Gate Bipolar Transistor, 27A I(C), 600V V(BR)CES, N-Channel, MODULE-23
Maker EUPEC [eupec GmbH] EUPEC [eupec GmbH]
package instruction MODULE-23 MODULE-23
Reach Compliance Code unknown unknown
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Maximum collector current (IC) 27 A 27 A
Collector-emitter maximum voltage 600 V 600 V
Configuration COMPLEX COMPLEX
JESD-30 code R-XUFM-X23 R-XUFM-X23
Number of components 7 7
Number of terminals 23 23
Package body material UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
surface mount NO NO
Terminal form UNSPECIFIED UNSPECIFIED
Terminal location UPPER UPPER
Transistor component materials SILICON SILICON
Nominal off time (toff) 250 ns 250 ns
Nominal on time (ton) 37 ns 37 ns
Base Number Matches 1 1
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