BUZ45A datasheet, PDF - EEWORLD Datasheet

BUZ45A: DescriptionPower Field-Effect Transistor, 8.3A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3; CategoryDiscrete semiconductor The transistor; File Size63KB，1 Pages; ManufacturerTT Electronics plc; Websitehttp://www.ttelectronics.com/

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BUZ45A Overview

Power Field-Effect Transistor, 8.3A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3

Parameter Name	Attribute value
Maker	TT Electronics plc
package instruction	FLANGE MOUNT, O-MBFM-P2
Reach Compliance Code	unknown
Is Samacsys	N
Configuration	SINGLE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	8.3 A
Maximum drain-source on-resistance	0.8 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	PIN/PEG
Terminal location	BOTTOM
Transistor component materials	SILICON
Base Number Matches	1

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