BFQ265A datasheet, PDF - EEWORLD Datasheet

BFQ265A: DescriptionTRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-202, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size84KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BFQ265A Overview

TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-202, BIP RF Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	HIGH VOLTAGE, HIGH RELIABILITY
Shell connection	COLLECTOR
Maximum collector current (IC)	0.4 A
Collector-based maximum capacity	2.5 pF
Collector-emitter maximum voltage	95 V
Configuration	SINGLE
Minimum DC current gain (hFE)	20
JEDEC-95 code	TO-202
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	NPN
Maximum power consumption environment	5 W
Certification status	Not Qualified
Guideline	CECC
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	1200 MHz

	BFQ265A	BFQ265
Description	TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-202, BIP RF Small Signal	TRANSISTOR Si, NPN, RF SMALL SIGNAL TRANSISTOR, TO-202, BIP RF Small Signal
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	HIGH VOLTAGE, HIGH RELIABILITY	HIGH VOLTAGE, HIGH RELIABILITY
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	0.4 A	0.4 A
Collector-based maximum capacity	2.5 pF	2.5 pF
Collector-emitter maximum voltage	95 V	65 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	20	50
JEDEC-95 code	TO-202	TO-202
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	NPN	NPN
Maximum power consumption environment	5 W	5 W
Certification status	Not Qualified	Not Qualified
Guideline	CECC	CECC
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	1200 MHz	1400 MHz

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