BFU510 datasheet, PDF - EEWORLD Datasheet

BFU510: DescriptionTRANSISTOR L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size106KB，16 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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BFU510 Overview

TRANSISTOR L BAND, SiGe, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC PACKAGE-4, BIP RF Small Signal

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G4
Contacts	4
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	0.015 A
Collector-emitter maximum voltage	2.3 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
highest frequency band	L BAND
JESD-30 code	R-PDSO-G4
Number of components	1
Number of terminals	4
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.035 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON GERMANIUM

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DATA SHEET

M3D124

BFU510

NPN SiGe wideband transistor

Product speciﬁcation

Supersedes data of 2001 Nov 08

2003 Jun 12

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