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BLP8G27-10

Description
RF POWER, FET
CategoryDiscrete semiconductor    The transistor   
File Size1MB,12 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BLP8G27-10 Overview

RF POWER, FET

BLP8G27-10 Parametric

Parameter NameAttribute value
MakerNXP
package instruction,
Reach Compliance Codeunknown
BLP8G27-10
Power LDMOS transistor
Rev. 2 — 1 September 2015
Product data sheet
1. Product profile
1.1 General description
10 W plastic LDMOS power transistor for base station applications at frequencies from
700 MHz to 2700 MHz.
Table 1.
Application performance (multiple frequencies)
Typical RF performance at T
case
= 25
C; I
Dq
= 110 mA; in a class-AB application circuit.
Test signal
Pulsed CW
2-carrier W-CDMA
[1]
[1]
f
(MHz)
2700
2700
I
Dq
(mA)
110
110
V
DS
(V)
28
28
P
L(AV)
(dBm)
33
33
G
p
(dB)
17
17
D
(%)
19
22
ACPR
5M
(dBc)
-
47.3
Test signal: 2-carrier W-CDMA; carrier spacing = 5 MHz. PAR = 8.4 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
High efficiency
Excellent ruggedness
Designed for broadband operation
Excellent thermal stability
High power gain
Integrated ESD protection
Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
1.3 Applications
CDMA
W-CDMA
GSM EDGE
MC-GSM
LTE
WiMAX

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