BLT82 datasheet, PDF - EEWORLD Datasheet

BLT82: DescriptionTRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA, BIP RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size64KB，3 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BLT82 Overview

TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA, BIP RF Small Signal

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	SMALL OUTLINE, R-PDSO-G8
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	10 V
Configuration	SINGLE
Minimum DC current gain (hFE)	30
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	MS-012AA
JESD-30 code	R-PDSO-G8
Number of components	1
Number of terminals	8
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power consumption environment	1.9 W
Maximum power dissipation(Abs)	1.9 W
Minimum power gain (Gp)	8 dB
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

	BLT82	BLT82-T
Description	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA, BIP RF Small Signal	TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, MS-012AA, BIP RF Small Signal
Maker	NXP	NXP
Reach Compliance Code	unknown	unknow
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	10 V	10 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	30	30
highest frequency band	ULTRA HIGH FREQUENCY BAND	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	MS-012AA	MS-012AA
JESD-30 code	R-PDSO-G8	R-PDSO-G8
Number of components	1	1
Number of terminals	8	8
Maximum operating temperature	175 °C	175 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	NPN	NPN
Maximum power consumption environment	1.9 W	1.9 W
Minimum power gain (Gp)	8 dB	8 dB
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
transistor applications	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON

Shortcut: L0 L1 L2 L3 L4 L5 L6 L7 L8 L9 LA LB LC LD LE LF LG LH LI LJ LK LL LM LN LO LP LQ LR LS LT LU LV LW LX LY LZ M0 M1 M2 M3 M4 M5 M6 M7 M8 M9 MA MB MC MD ME MF MG MH MI MJ MK ML MM MN MO MP MQ MR MS MT MU MV MW MX MY MZ N0 N1 N2 N3 N4 N5 N6 N7 N8 NA NB NC ND NE NF NG NH NI NJ NK NL NM NN NO NP NQ NR NS NT NU NV NX NZ O0 O1 O2 O3 OA OB OC OD OE OF OG OH OI OJ OK OL OM ON OP OQ OR OS OT OV OX OY OZ P0 P1 P2 P3 P4 P5 P6 P7 P8 P9 PA PB PC PD PE PF PG PH PI PJ PK PL PM PN PO PP PQ PR PS PT PU PV PW PX PY PZ Q1 Q2 Q3 Q4 Q5 Q6 Q8 Q9 QA QB QC QE QF QG QH QK QL QM QP QR QS QT QV QW QX QY R0 R1 R2 R3 R4 R5 R6 R7 R8 R9 RA RB RC RD RE RF RG RH RI RJ RK RL RM RN RO RP RQ RR RS RT RU RV RW RX RY RZ

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