BSJ110 datasheet, PDF - EEWORLD Datasheet

BSJ110: DescriptionTRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size71KB，4 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BSJ110 Overview

TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal

Parameter Name	Attribute value
Maker	NXP
package instruction	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown
ECCN code	EAR99
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
Maximum drain-source on-resistance	18 Ω
FET technology	JUNCTION
Maximum feedback capacitance (Crss)	15 pF
JEDEC-95 code	TO-18
JESD-30 code	O-MBCY-W3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	METAL
Package shape	ROUND
Package form	CYLINDRICAL
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	WIRE
Terminal location	BOTTOM
transistor applications	SWITCHING
Transistor component materials	SILICON

	BSJ110	BSJ109	BSJ108
Description	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal	TRANSISTOR 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-18, FET General Purpose Small Signal
Maker	NXP	NXP	NXP
package instruction	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3	CYLINDRICAL, O-MBCY-W3
Reach Compliance Code	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99
Configuration	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	25 V	25 V	25 V
Maximum drain-source on-resistance	18 Ω	12 Ω	8 Ω
FET technology	JUNCTION	JUNCTION	JUNCTION
Maximum feedback capacitance (Crss)	15 pF	15 pF	15 pF
JEDEC-95 code	TO-18	TO-18	TO-18
JESD-30 code	O-MBCY-W3	O-MBCY-W3	O-MBCY-W3
Number of components	1	1	1
Number of terminals	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON

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