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BSN20BK

Description
SMALL SIGNAL, FET
CategoryDiscrete semiconductor    The transistor   
File Size275KB,16 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BSN20BK Overview

SMALL SIGNAL, FET

BSN20BK Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompliant
Other featuresLOGIC LEVEL COMPATIBLE
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage60 V
Maximum drain current (ID)0.265 A
Maximum drain-source on-resistance0.0032 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)7 pF
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeN-CHANNEL
GuidelineIEC-60134
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
BSN20BK
18 December 2014
SO
T2
3
60 V, N-channel Trench MOSFET
Product data sheet
1. General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23
(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET
technology.
2. Features and benefits
Logic-level compatible
Very fast switching
Trench MOSFET technology
ElectroStatic Discharge (ESD) protection: 2 kV HBM
3. Applications
Relay driver
High-speed line driver
Low-side loadswitch
Switching circuits
4. Quick reference data
Table 1.
Symbol
V
DS
V
GS
I
D
Quick reference data
Parameter
drain-source voltage
gate-source voltage
drain current
V
GS
= 10 V; T
amb
= 25 °C
V
GS
= 10 V; T
sp
= 25 °C
Static characteristics
R
DSon
drain-source on-state
resistance
[1]
[1]
Conditions
T
j
= 25 °C
Min
-
-20
-
-
Typ
-
-
-
-
Max
60
20
265
330
Unit
V
V
mA
mA
V
GS
= 10 V; I
D
= 200 mA; T
j
= 25 °C
-
2.1
2.8
Ω
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm .
2
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BSN20BK Related Products

BSN20BK
Description SMALL SIGNAL, FET
Is it Rohs certified? conform to
Maker NXP
package instruction SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code compliant
Other features LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 60 V
Maximum drain current (ID) 0.265 A
Maximum drain-source on-resistance 0.0032 Ω
FET technology METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss) 7 pF
JEDEC-95 code TO-236AB
JESD-30 code R-PDSO-G3
JESD-609 code e3
Humidity sensitivity level 1
Number of components 1
Number of terminals 3
Operating mode ENHANCEMENT MODE
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form SMALL OUTLINE
Peak Reflow Temperature (Celsius) 260
Polarity/channel type N-CHANNEL
Guideline IEC-60134
surface mount YES
Terminal surface Tin (Sn)
Terminal form GULL WING
Terminal location DUAL
Maximum time at peak reflow temperature 30
transistor applications SWITCHING
Transistor component materials SILICON
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