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BU705

Description
2.5A, 700V, NPN, Si, POWER TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size119KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

BU705 Overview

2.5A, 700V, NPN, Si, POWER TRANSISTOR

BU705 Parametric

Parameter NameAttribute value
MakerNXP
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Other featuresFORMED LEAD OPTIONS ARE AVAILABLE
Shell connectionCOLLECTOR
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage700 V
ConfigurationSINGLE
Minimum DC current gain (hFE)2.2
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment75 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)7 MHz
VCEsat-Max1 V

BU705 Related Products

BU705 BU705D
Description 2.5A, 700V, NPN, Si, POWER TRANSISTOR TRANSISTOR 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Maker NXP NXP
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
Shell connection COLLECTOR COLLECTOR
Maximum collector current (IC) 2.5 A 2.5 A
Collector-emitter maximum voltage 700 V 700 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 2.2 2.2
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type NPN NPN
Maximum power consumption environment 75 W 75 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 7 MHz 7 MHz
VCEsat-Max 1 V 1 V
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