BUK475-100B datasheet, PDF - EEWORLD Datasheet

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BUK475-100B: DescriptionTRANSISTOR 12 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, FULL PACK-3, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size291KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BUK475-100B Overview

TRANSISTOR 12 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, FULL PACK-3, FET General Purpose Power

BUK475-100B Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	12 A
Maximum drain current (ID)	12 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF
JESD-30 code	R-PSFM-T3
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	30 W
Maximum power dissipation(Abs)	30 W
Maximum pulsed drain current (IDM)	48 A
Certification status	Not Qualified
surface mount	NO
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON
Maximum off time (toff)	240 ns
Maximum opening time (tons)	70 ns

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BUK475-100B Related Products

	BUK475-100B	BUK475-100A
Description	TRANSISTOR 12 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, FULL PACK-3, FET General Purpose Power	TRANSISTOR 14 A, 100 V, 0.08 ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, FULL PACK-3, FET General Purpose Power
Is it Rohs certified?	incompatible	incompatible
Maker	NXP	NXP
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ
Shell connection	ISOLATED	ISOLATED
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V	100 V
Maximum drain current (Abs) (ID)	12 A	14 A
Maximum drain current (ID)	12 A	14 A
Maximum drain-source on-resistance	0.1 Ω	0.08 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)	150 pF	150 pF
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	30 W	30 W
Maximum power dissipation(Abs)	30 W	30 W
Maximum pulsed drain current (IDM)	48 A	56 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Maximum off time (toff)	240 ns	240 ns
Maximum opening time (tons)	70 ns	70 ns

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