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BUK9C10-65BIT

Description
75A, 65V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-7
CategoryDiscrete semiconductor    The transistor   
File Size165KB,15 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
Download Datasheet Parametric View All

BUK9C10-65BIT Overview

75A, 65V, 0.011ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-7

BUK9C10-65BIT Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerNXP
package instructionSMALL OUTLINE, R-PSSO-G6
Contacts7
Reach Compliance Codeunknown
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)214 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE, CURRENT AND KELVIN SENSOR
Minimum drain-source breakdown voltage65 V
Maximum drain current (ID)75 A
Maximum drain-source on-resistance0.011 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)346 A
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
BUK9C10-65BIT
N-channel TrenchPLUS logic level FET
Rev. 02 — 21 June 2010
Product data sheet
1. Product profile
1.1 General description
N-channel enhancement mode field-effect power transistor in SOT427. Device is
manufactured using NXP High-Performance TrenchPLUS technology, featuring very low
on-state resistance, integrated current sensing transistors and over temperature
protection diodes.
1.2 Features and benefits
AEC-Q101 compliant
Low conduction losses due to low
on-state resistance
1.3 Applications
Lamp switching
Motor drive systems
Power distribution
Solenoid drivers
1.4 Quick reference data
Table 1.
Symbol
R
DSon
Quick reference data
Parameter
drain-source
on-state
resistance
ratio of drain
current to sense
current
drain-source
breakdown
voltage
Conditions
V
GS
= 5 V; I
D
= 25 A;
T
j
= 25 °C; see
Figure 13;
see
Figure 12
T
j
= 25 °C; V
GS
= 5 V;
see
Figure 14
I
D
= 250 µA; V
GS
= 0 V;
T
j
= 25 °C
Min
-
Typ
8.5
Max Unit
10
mΩ
Static characteristics
I
D
/I
sense
8094 8993 9892 A/A
V
(BR)DSS
65
-
-
V
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