BYD53D datasheet, PDF - EEWORLD Datasheet

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BYD53D: DescriptionDIODE 0.4 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode; CategoryDiscrete semiconductor diode; File Size87KB，12 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BYD53D Overview

DIODE 0.4 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode

BYD53D Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	HERMETIC SEALED, GLASS PACKAGE-2
Contacts	2
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	2.1 V
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak forward current	5 A
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Maximum output current	0.4 A
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	200 V
Maximum reverse recovery time	0.03 µs
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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DISCRETE SEMICONDUCTORS

DATA SHEET

book, halfpage

M3D119

BYD53 series

Fast soft-recovery controlled

avalanche rectifiers

Product speciﬁcation

Supersedes data of 1996 Sep 18

1998 Dec 04

BYD53D Related Products

	BYD53D	BYD53G	BYD53J	BYD53K	BYD53M	BYD53U	BYD53V	BYD53VT/R
Description	DIODE 0.4 A, 200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 600 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 800 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.4 A, 1000 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.45 A, 1200 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.45 A, 1400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode	DIODE 0.45 A, 1400 V, SILICON, SIGNAL DIODE, HERMETIC SEALED, GLASS PACKAGE-2, Signal Diode
package instruction	HERMETIC SEALED, GLASS PACKAGE-2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	HERMETIC SEALED, GLASS PACKAGE-2	O-LALF-W2	O-LALF-W2
Contacts	2	2	2	2	2	2	2	2
Reach Compliance Code	compliant	unknown	unknown	unknown	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2	O-LALF-W2
Number of components	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Maximum output current	0.4 A	0.4 A	0.4 A	0.4 A	0.4 A	0.45 A	0.45 A	0.45 A
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM	LONG FORM
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	200 V	400 V	600 V	800 V	1000 V	1200 V	1400 V	1400 V
Maximum reverse recovery time	0.03 µs	0.03 µs	0.03 µs	0.075 µs	0.075 µs	0.15 µs	0.15 µs	0.15 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Other features	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	LOW LEAKAGE CURRENT	-
Maximum forward voltage (VF)	2.1 V	2.1 V	2.1 V	2.1 V	2.1 V	1.7 V	1.7 V	-
Maximum non-repetitive peak forward current	5 A	5 A	5 A	5 A	5 A	5 A	5 A	-
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	-
Base Number Matches	-	1	1	1	1	1	1	1

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