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BYM56D112

Description
DIODE 1.4 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size141KB,5 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BYM56D112 Overview

DIODE 1.4 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BYM56D112 Parametric

Parameter NameAttribute value
MakerNXP
package instructionO-LALF-W2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.15 V
JESD-30 codeO-LALF-W2
Maximum non-repetitive peak forward current80 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current1.4 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
Maximum reverse current1 µA
Maximum reverse recovery time3 µs
surface mountNO
technologyAVALANCHE
Terminal formWIRE
Terminal locationAXIAL

BYM56D112 Related Products

BYM56D112 BYM56B112 BYM56E112 BYM56A112
Description DIODE 1.4 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1.4 A, 400 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1.4 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1.4 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
package instruction O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Reach Compliance Code unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.15 V 1.15 V 1.15 V 1.15 V
JESD-30 code O-LALF-W2 O-LALF-W2 O-LALF-W2 O-LALF-W2
Maximum non-repetitive peak forward current 80 A 80 A 80 A 80 A
Number of components 1 1 1 1
Phase 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Maximum output current 1.4 A 1.4 A 1.4 A 1.4 A
Package body material GLASS GLASS GLASS GLASS
Package shape ROUND ROUND ROUND ROUND
Package form LONG FORM LONG FORM LONG FORM LONG FORM
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 800 V 400 V 1000 V 200 V
Maximum reverse current 1 µA 1 µA 1 µA 1 µA
Maximum reverse recovery time 3 µs 3 µs 3 µs 3 µs
surface mount NO NO NO NO
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form WIRE WIRE WIRE WIRE
Terminal location AXIAL AXIAL AXIAL AXIAL
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