DIODE 1.4 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LALF-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.15 V |
| JESD-30 code | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 80 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 175 °C |
| Minimum operating temperature | -65 °C |
| Maximum output current | 1.4 A |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | LONG FORM |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum reverse current | 1 µA |
| Maximum reverse recovery time | 3 µs |
| surface mount | NO |
| technology | AVALANCHE |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BYM56E112 | BYM56B112 | BYM56D112 | BYM56A112 | |
|---|---|---|---|---|
| Description | DIODE 1.4 A, 1000 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1.4 A, 400 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1.4 A, 800 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1.4 A, 200 V, SILICON, RECTIFIER DIODE, Rectifier Diode |
| package instruction | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| Maximum forward voltage (VF) | 1.15 V | 1.15 V | 1.15 V | 1.15 V |
| JESD-30 code | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 | O-LALF-W2 |
| Maximum non-repetitive peak forward current | 80 A | 80 A | 80 A | 80 A |
| Number of components | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C |
| Minimum operating temperature | -65 °C | -65 °C | -65 °C | -65 °C |
| Maximum output current | 1.4 A | 1.4 A | 1.4 A | 1.4 A |
| Package body material | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND |
| Package form | LONG FORM | LONG FORM | LONG FORM | LONG FORM |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 1000 V | 400 V | 800 V | 200 V |
| Maximum reverse current | 1 µA | 1 µA | 1 µA | 1 µA |
| Maximum reverse recovery time | 3 µs | 3 µs | 3 µs | 3 µs |
| surface mount | NO | NO | NO | NO |
| technology | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
| Terminal form | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | NXP | - | NXP | NXP |
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