Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
BYQ30E, BYQ30EB, BYQ30ED series
SYMBOL
QUICK REFERENCE DATA
V
R
= 150 V/ 200 V
V
F
≤
0.95 V
I
O(AV)
= 16 A
I
RRM
= 0.2 A
t
rr
≤
25 ns
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier diodes intended for use as output rectifiers in high frequency switched mode power
supplies.
The BYQ30E series is supplied in the SOT78 conventional leaded package.
The BYQ30EB series is supplied in the SOT404 surface mounting package.
The BYQ30ED series is supplied in the SOT428 surface mounting package.
PINNING
PIN
1
2
3
tab
DESCRIPTION
anode 1
cathode
1
anode 2
cathode
SOT78 (TO220AB)
tab
SOT404
tab
SOT428
tab
2
1 23
2
1
3
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
I
RRM
I
RSM
T
j
T
stg
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified output
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Peak non-repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
square wave;
δ
= 0.5; T
mb
≤
104 ˚C
square wave;
δ
= 0.5; T
mb
≤
104 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied V
RRM(max)
t
p
= 2
µs; δ
= 0.001
t
p
= 100
µs
CONDITIONS
BYQ30E/ BYQ30EB/ BYQ30ED
-
-
-
-
-
-
-
-
-
-
- 40
MIN.
-150
150
150
150
16
16
80
88
0.2
0.2
150
150
MAX.
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
˚C
˚C
1.
It is not possible to make connection to pin 2 of the SOT428 or SOT404 packages.
October 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL
V
C
PARAMETER
Electrostatic discharge
capacitor voltage
CONDITIONS
BYQ30E, BYQ30EB, BYQ30ED series
MIN.
-
MAX.
8
UNIT
kV
Human body model;
C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint, FR4 board
MIN.
-
-
-
-
TYP. MAX. UNIT
-
-
60
50
3
2.5
-
-
K/W
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
Q
rr
t
rr1
t
rr2
V
fr
Forward voltage
Reverse current
Reverse recovered charge
Reverse recovery time
Reverse recovery time
Forward recovery voltage
CONDITIONS
I
F
= 8 A; T
j
= 150˚C
I
F
= 16 A; T
j
= 150˚C
I
F
= 16 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
I
F
= 2 A; V
R
≥
30 V; -dI
F
/dt = 20 A/µs
I
F
= 1 A; V
R
≥
30 V; -dI
F
/dt = 100 A/µs
I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A
I
F
= 1 A; dI
F
/dt = 10 A/µs
MIN.
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
0.84
1
1.12
4
0.3
4
20
12
1
0.95
1.15
1.25
30
0.6
11
25
22
-
V
V
V
µA
mA
nC
ns
ns
V
October 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30E, BYQ30EB, BYQ30ED series
I
dI
F
dt
R
F
t
rr
time
D.U.T.
Voltage Pulse Source
Q
I
R
I
s
10%
100%
Current
shunt
to ’scope
rrm
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.4. Circuit schematic for t
rr2
I
F
0.5A
IF
0A
time
VF
IR
I rec = 0.25A
V
VF
time
fr
I = 1A
R
trr2
Fig.2. Definition of V
fr
Fig.5. Definition of t
rr2
12
10
8
6
4
2
Forward dissipation, PF (W) BYQ30
Vo = 0.75 V
Rs = 0.025 Ohms
0.5
0.2
0.1
I
t
p
Tmb(max) / C
D = 1.0
114
120
126
132
12
10
8
Forward dissipation, PF (W) BYQ30
Vo = 0.75 V
Rs 0.025 Ohms
Tmb(max) / C
114
120
a = 1.57
1.9
2.2
2.8
6
4
2
0
4
132
138
144
150
8
126
D=
t
p
T
t
138
144
150
12
T
0
0
2
4
6
8
Average forward current, IF(AV) (A)
10
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
Fig.3. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
October 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
BYQ30E, BYQ30EB, BYQ30ED series
trr / ns
1000
100 Qs / nC
100
IF=10A
IF=10A
5A
2A
1A
10
IF=1A
10
1
1.0
1
10
dIF/dt (A/us)
100
1.0
10
-dIF/dt (A/us)
100
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
10
Irrm / A
10
Transient thermal impedance, Zth j-mb (K/W)
IF=10A
1
IF=1A
1
0.1
0.1
0.01
P
D
t
p
D=
t
p
T
t
0.01
1
10
-dIF/dt (A/us)
100
0.001
1us
T
10us
100us 1ms
10ms 100ms
1s
pulse width, tp (s)
BYQ30E
10s
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
20
Forward current, IF (A)
Tj = 25 C
Tj = 150 C
BYQ30
15
10
typ
5
max
0
0
0.5
1
1.5
Forward voltage, VF (V)
2
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
October 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
ultrafast, rugged
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
BYQ30E, BYQ30EB, BYQ30ED series
4,5
max
10,3
max
1,3
3,7
2,8
5,9
min
15,8
max
3,0 max
not tinned
3,0
13,5
min
1,3
max
1 2 3
(2x)
2,54 2,54
0,9 max (3x)
0,6
2,4
Fig.12. SOT78 (TO220AB); pin 2 connected to mounting base.
Notes
1. Refer to mounting instructions for SOT78 (TO220) envelopes.
2. Epoxy meets UL94 V0 at 1/8".
October 1998
5
Rev 1.200
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