BZW03-C10/50112 datasheet, PDF

BZW03-C10/50112: DescriptionDIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor; CategoryDiscrete semiconductor diode; File Size213KB，7 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BZW03-C10/50112 Overview

DIODE 1000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, Transient Suppressor

Parameter Name	Attribute value
Maker	NXP
package instruction	O-LALF-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Minimum breakdown voltage	9.4 V
Shell connection	ISOLATED
Maximum clamping voltage	14.8 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	O-LALF-W2
Maximum non-repetitive peak reverse power dissipation	1000 W
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Minimum operating temperature	-65 °C
Package body material	GLASS
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	1.75 W
Certification status	Not Qualified
Maximum reverse current	40 µA
surface mount	NO
technology	AVALANCHE
Terminal form	WIRE
Terminal location	AXIAL

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