MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMUN2211LT1/D
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor with
Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single device and its
external resistor bias network. The BRT (Bias Resistor Transistor) contains a single
transistor with a monolithic bias network consisting of two resistors; a series base
resistor and a base-emitter resistor. The BRT eliminates these individual components
by integrating them into a single device. The use of a BRT can reduce both system
cost and board space. The device is housed in the SOT-23 package which is
designed for low power surface mount applications.
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
The SOT-23 package can be soldered using wave or
reflow. The modified gull-winged leads absorb thermal
stress during soldering eliminating the possibility of
damage to the die.
•
Available in 8 mm embossed tape and reel. Use the
Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the13 inch/10,000 unit reel.
MAXIMUM RATINGS
(TA = 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
Total Power Dissipation @ TA = 25°C(1)
Derate above 25°C
Symbol
VCBO
VCEO
IC
PD
R1
PIN 3
COLLECTOR
(OUTPUT)
MMUN2211LT1
SERIES
Motorola Preferred Devices
NPN SILICON
BIAS RESISTOR
TRANSISTOR
3
1
PIN 1 R2
BASE
(INPUT)
PIN 2
EMITTER
(GROUND)
2
CASE 318-08, STYLE 6
SOT-23 (TO-236AB)
Value
50
50
100
*200
1.6
Unit
Vdc
Vdc
mAdc
mW
mW/°C
THERMAL CHARACTERISTICS
Thermal Resistance — Junction-to-Ambient (surface mounted)
Operating and Storage Temperature Range
Maximum Temperature for Soldering Purposes,
Time in Solder Bath
R
θJA
TJ, Tstg
TL
625
– 65 to +150
260
10
°C/W
°C
°C
Sec
DEVICE MARKING AND RESISTOR VALUES
Device
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1(2)
MMUN2216LT1(2)
MMUN2230LT1(2)
MMUN2231LT1(2)
MMUN2232LT1(2)
MMUN2233LT1(2)
MMUN2234LT1(2)
Marking
A8A
A8B
A8C
A8D
A8E
A8F
A8G
A8H
A8J
A8K
A8L
R1 (K)
10
22
47
10
10
4.7
1
2.2
22
4.7
4.7
22
R2 (K)
10
22
47
47
∞
∞
1
2.2
22
4.7
47
47
1. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
2. New devices. Updated curves to follow in subsequent data sheets.
Thermal Clad is a trademark of the Bergquist Company
Preferred
devices are Motorola recommended choices for future use and best overall value.
(Replaces MMUN2211T1/D)
Motorola Small–Signal
©
Motorola, Inc. 1996
Transistors, FETs and Diodes Device Data
1
MMUN2211LT1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0)
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0)
Emitter-Base Cutoff Current
(VEB = 6.0 V, IC = 0)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
ICBO
ICEO
IEBO
—
—
—
—
—
—
—
—
—
—
—
—
—
50
50
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
—
—
nAdc
nAdc
mAdc
Collector-Base Breakdown Voltage (IC = 10
µA,
IE = 0)
Collector-Emitter Breakdown Voltage(3) (IC = 2.0 mA, IB = 0)
V(BR)CBO
V(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS(3)
DC Current Gain
(VCE = 10 V, IC = 5.0 mA)
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
hFE
35
60
80
80
160
160
3.0
8.0
15
80
80
—
60
100
140
140
350
350
5.0
15
30
200
150
—
—
—
—
—
—
—
—
—
—
—
—
0.25
Vdc
Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MMUN2230LT1/MMUN2231LT1
(IC = 10 mA, IB = 1 mA) MMUN2215LT1/MMUN2216LT1
MMUN2232LT1/MMUN2233LT1/MMUN2234LT1
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 k
Ω)
MMUN2211LT1
MMUN2212LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2213LT1
VCE(sat)
VOL
—
—
—
—
—
—
—
—
—
—
—
VOH
4.9
—
—
—
—
—
—
—
—
—
—
—
—
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
—
Vdc
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 k
Ω)
Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 k
Ω)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 k
Ω)
MMUN2230LT1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 k
Ω)
MMUN2215LT1
MMUN2216LT1
MMUN2233LT1
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
Vdc
2
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMUN2211LT1 SERIES
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
Min
Typ
Max
Unit
ON CHARACTERISTICS(3)
Input Resistor
MMUN2211LT1
MMUN2212LT1
MMUN2213LT1
MMUN2214LT1
MMUN2215LT1
MMUN2216LT1
MMUN2230LT1
MMUN2231LT1
MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
MMUN2211LT1/MMUN2212LT1/MMUN2213LT1
MMUN2214LT1
MMUN2215LT1/MMUN2216LT1
MMUN2230LT1/MMUN2231LT1/MMUN2232LT1
MMUN2233LT1
MMUN2234LT1
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
0.8
0.17
—
0.8
0.055
0.38
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
1.0
0.21
—
1.0
0.1
0.47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
1.2
0.25
—
1.2
0.185
0.56
k
Ω
Resistor Ratio
R1/R2
3. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%.
Motorola Small–Signal Transistors, FETs and Diodes Device Data
3
MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2211LT1
250
PD , POWER DISSIPATION (MILLIWATTS)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = –25°C
25°C
75°C
200
0.1
150
100
R
θJA
= 625°C/W
0.01
50
0
–50
0
50
100
TA, AMBIENT TEMPERATURE (°C)
150
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
Figure 1. Derating Curve
Figure 2. VCE(sat) versus IC
1000
h FE, DC CURRENT GAIN (NORMALIZED)
VCE = 10 V
Cob , CAPACITANCE (pF)
TA = 75°C
25°C
–25°C
100
4
f = 1 MHz
lE = 0 V
TA = 25°C
3
2
1
10
1
10
IC, COLLECTOR CURRENT (mA)
100
0
0
10
20
30
40
VR, REVERSE BIAS VOLTAGE (VOLTS)
50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
100
75°C
IC , COLLECTOR CURRENT (mA)
25°C
TA = –25°C
10
VO = 0.2 V
Vin, INPUT VOLTAGE (VOLTS)
TA = –25°C
25°C
75°C
1
10
1
0.1
0.01
VO = 5 V
0
1
2
5
6
7
3
4
Vin, INPUT VOLTAGE (VOLTS)
8
9
10
0.001
0.1
0
10
20
30
40
IC, COLLECTOR CURRENT (mA)
50
Figure 5. VCE(sat) versus IC
Figure 6. VCE(sat) versus IC
4
Motorola Small–Signal Transistors, FETs and Diodes Device Data
MMUN2211LT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS
MMUN2212LT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = –25°C
25°C
75°C
h FE, DC CURRENT GAIN (NORMALIZED)
1000
VCE = 10 V
TA = 75°C
25°C
–25°C
100
0.1
0.01
–
0.001
0
20
40
60
IC, COLLECTOR CURRENT (mA)
80
10
1
10
IC, COLLECTOR CURRENT (mA)
100
Figure 7. VCE(sat) versus IC
Figure 8. DC Current Gain
4
f = 1 MHz
lE = 0 V
TA = 25°C
100
75°C
25°C
TA = –25°C
Cob , CAPACITANCE (pF)
3
IC , COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
VO = 5 V
0
2
4
6
8
10
0
0
10
20
30
40
50
0.001
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
Figure 9. Output Capacitance
Figure 10. Output Current versus Input Voltage
100
VO = 0.2 V
Vin , INPUT VOLTAGE (VOLTS)
TA = –25°C
10
75°C
25°C
1
0.1
0
10
20
30
40
50
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Voltage versus Output Current
Motorola Small–Signal Transistors, FETs and Diodes Device Data
5
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