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MPS4249ZL1

Description
50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
CategoryDiscrete semiconductor    The transistor   
File Size42KB,2 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MPS4249ZL1 Overview

50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92

MPS4249ZL1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionCYLINDRICAL, O-PBCY-W3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresLOW NOISE, EUROPEAN PART NUMBER
Maximum collector current (IC)0.05 A
Collector-based maximum capacity6 pF
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-W3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typePNP
Maximum power consumption environment1.5 W
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
VCEsat-Max0.25 V
Base Number Matches1

MPS4249ZL1 Related Products

MPS4249ZL1 0734205072 MPS4249RL MPS4249 MPS4249-5 MPS4249RLRP MPS4250-5 MPS4250-18 MPS4249RLRB MPS4249-18
Description 50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92 50 Ohms, SMP-MAX Plug Press-in Receptacle Catchers Mitt, Gold Plating Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR
Maker Motorola ( NXP ) - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP ) - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
package instruction CYLINDRICAL, O-PBCY-W3 - CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-T3 CYLINDRICAL, O-PBCY-W3 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown - unknown unknown unknown unknown unknown unknown unknown unknown
ECCN code EAR99 - EAR99 - EAR99 EAR99 - - EAR99 EAR99
Other features LOW NOISE, EUROPEAN PART NUMBER - LOW NOISE, EUROPEAN PART NUMBER LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE LOW NOISE
Maximum collector current (IC) 0.05 A - 0.05 A 0.05 A 0.05 A 0.05 A - - 0.05 A 0.05 A
Collector-based maximum capacity 6 pF - 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF 6 pF
Collector-emitter maximum voltage 60 V - 60 V 60 V 60 V 60 V 40 V 40 V 60 V 60 V
Configuration SINGLE - SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 - 100 100 100 100 250 250 100 100
JESD-30 code O-PBCY-W3 - O-PBCY-W3 O-PBCY-W3 O-PBCY-T3 O-PBCY-W3 O-PBCY-T3 O-PBCY-T3 O-PBCY-W3 O-PBCY-T3
Number of components 1 - 1 1 1 1 1 1 1 1
Number of terminals 3 - 3 3 3 3 3 3 3 3
Maximum operating temperature 150 °C - 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND - ROUND ROUND ROUND ROUND ROUND ROUND ROUND ROUND
Package form CYLINDRICAL - CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL CYLINDRICAL
Polarity/channel type PNP - PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power consumption environment 1.5 W - 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W 1.5 W
Certification status Not Qualified - Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO - NO NO NO NO NO NO NO NO
Terminal form WIRE - WIRE WIRE THROUGH-HOLE WIRE THROUGH-HOLE THROUGH-HOLE WIRE THROUGH-HOLE
Terminal location BOTTOM - BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
transistor applications AMPLIFIER - AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON - SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 100 MHz - 100 MHz 100 MHz 100 MHz 100 MHz 250 MHz 250 MHz 100 MHz 100 MHz
VCEsat-Max 0.25 V - 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V 0.25 V
Base Number Matches 1 - 1 1 1 1 1 - - -
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