MPS4249 datasheet, PDF - EEWORLD Datasheet

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MPS4249: DescriptionSmall Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size42KB，2 Pages; ManufacturerMotorola ( NXP ); Websitehttps://www.nxp.com

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MPS4249 Overview

Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92

MPS4249 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3
Reach Compliance Code	unknown
Is Samacsys	N
Other features	LOW NOISE
Maximum collector current (IC)	0.05 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power consumption environment	1.5 W
Maximum power dissipation(Abs)	0.2 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.25 V
Base Number Matches	1

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	MPS4249	MPS4249ZL1	0734205072	MPS4249RL	MPS4249-5	MPS4249RLRP	MPS4250-5	MPS4250-18	MPS4249RLRB	MPS4249-18
Description	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92	50 Ohms, SMP-MAX Plug Press-in Receptacle Catchers Mitt, Gold Plating	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 40V V(BR)CEO, 1-Element, PNP, Silicon	Small Signal Bipolar Transistor, 0.05A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	50mA, 60V, PNP, Si, SMALL SIGNAL TRANSISTOR
Maker	Motorola ( NXP )	Motorola ( NXP )	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )	-	Motorola ( NXP )	Motorola ( NXP )	Motorola ( NXP )
package instruction	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	-	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-T3	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-T3
Reach Compliance Code	unknown	unknown	-	unknown	unknown	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE, EUROPEAN PART NUMBER	-	LOW NOISE, EUROPEAN PART NUMBER	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Maximum collector current (IC)	0.05 A	0.05 A	-	0.05 A	0.05 A	0.05 A	-	-	0.05 A	0.05 A
Collector-based maximum capacity	6 pF	6 pF	-	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF	6 pF
Collector-emitter maximum voltage	60 V	60 V	-	60 V	60 V	60 V	40 V	40 V	60 V	60 V
Configuration	SINGLE	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100	-	100	100	100	250	250	100	100
JESD-30 code	O-PBCY-W3	O-PBCY-W3	-	O-PBCY-W3	O-PBCY-T3	O-PBCY-W3	O-PBCY-T3	O-PBCY-T3	O-PBCY-W3	O-PBCY-T3
Number of components	1	1	-	1	1	1	1	1	1	1
Number of terminals	3	3	-	3	3	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	-	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	-	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	-	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	PNP	PNP	-	PNP	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power consumption environment	1.5 W	1.5 W	-	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W	1.5 W
Certification status	Not Qualified	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	-	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	-	WIRE	THROUGH-HOLE	WIRE	THROUGH-HOLE	THROUGH-HOLE	WIRE	THROUGH-HOLE
Terminal location	BOTTOM	BOTTOM	-	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	-	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	-	100 MHz	100 MHz	100 MHz	250 MHz	250 MHz	100 MHz	100 MHz
VCEsat-Max	0.25 V	0.25 V	-	0.25 V	0.25 V	0.25 V	0.25 V	0.25 V	0.25 V	0.25 V
Base Number Matches	1	1	-	1	1	1	1	-	-	-
ECCN code	-	EAR99	-	EAR99	EAR99	EAR99	-	-	EAR99	EAR99

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