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BFG197W/X

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size803KB,13 Pages
ManufacturerPhilips Semiconductors (NXP Semiconductors N.V.)
Websitehttps://www.nxp.com/
Download Datasheet Parametric Compare View All

BFG197W/X Overview

Transistor

BFG197W/X Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerPhilips Semiconductors (NXP Semiconductors N.V.)
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)0.1 A
ConfigurationSingle
Minimum DC current gain (hFE)40
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.5 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BFG197W/X Related Products

BFG197W/X BFG197W/XR
Description Transistor Transistor
Is it Rohs certified? incompatible incompatible
Maker Philips Semiconductors (NXP Semiconductors N.V.) Philips Semiconductors (NXP Semiconductors N.V.)
Reach Compliance Code unknown unknown
Is Samacsys N N
Maximum collector current (IC) 0.1 A 0.1 A
Configuration Single Single
Minimum DC current gain (hFE) 40 40
JESD-609 code e0 e0
Maximum operating temperature 150 °C 150 °C
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 0.5 W 0.5 W
surface mount YES YES
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Base Number Matches 1 1
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