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MTH6N100E

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size589KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
Download Datasheet Parametric Compare View All

MTH6N100E Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

MTH6N100E Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMotorola ( NXP )
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
ConfigurationSingle
Maximum drain current (Abs) (ID)6 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)180 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

MTH6N100E Related Products

MTH6N100E
Description Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
Is it Rohs certified? incompatible
Maker Motorola ( NXP )
Reach Compliance Code unknown
Is Samacsys N
Configuration Single
Maximum drain current (Abs) (ID) 6 A
FET technology METAL-OXIDE SEMICONDUCTOR
JESD-609 code e0
Operating mode ENHANCEMENT MODE
Maximum operating temperature 150 °C
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 180 W
surface mount NO
Terminal surface Tin/Lead (Sn/Pb)
Base Number Matches 1
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