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MMBV2107LT1

Description
HF-UHF BAND, 22pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB
CategoryDiscrete semiconductor    diode   
File Size131KB,6 Pages
ManufacturerMotorola ( NXP )
Websitehttps://www.nxp.com
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MMBV2107LT1 Overview

HF-UHF BAND, 22pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB

MMBV2107LT1 Parametric

Parameter NameAttribute value
MakerMotorola ( NXP )
package instructionR-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Minimum breakdown voltage30 V
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.5
Nominal diode capacitance22 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
frequency bandHIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 codeTO-236AB
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Maximum power dissipation0.225 W
Certification statusNot Qualified
Maximum reverse current0.1 µA
Reverse test voltage25 V
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Varactor Diode ClassificationABRUPT
Base Number Matches1
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBV2101LT1/D
Silicon Tuning Diodes
These devices are designed in the popular PLASTIC PACKAGE for high volume
requirements of FM Radio and TV tuning and AFC, general frequency control and
tuning applications.They provide solid–state reliability in replacement of mechanical
tuning methods. Also available in Surface Mount Package up to 33pF.
High Q
Controlled and Uniform Tuning Ratio
Standard Capacitance Tolerance
10%
Complete Typical Design Curves
3
Cathode
SOT–23
2
Cathode
1
Anode
MMBV2101LT1
MMBV2103LT1
MMBV2105LT1
MMBV2107LT1
MMBV2108LT1
MMBV2109LT1
MV2101 MV2104
MV2105 MV2108
MV2109 MV2111
MV2115
6.8–100 pF
30 VOLTS
VOLTAGE VARIABLE
CAPACITANCE DIODES
3
TO–92
1
Anode
MAXIMUM RATINGS
Rating
Reverse Voltage
Forward Current
Forward Power Dissipation
@ TA = 25°C
Derate above 25°C
Junction Temperature
Storage Temperature Range
Symbol
VR
IF
PD
280
2.8
TJ
Tstg
+150
–55 to +150
225
1.8
mW
mW/°C
°C
°C
1
2
MV21xx
MMBV21xxLT1
30
200
Unit
Vdc
mAdc
1
2
CASE 318 – 08, STYLE 8
SOT– 23 (TO – 236AB)
DEVICE MARKING
MMBV2101LT1 = M4G
MMBV2103LT1 = 4H
MMBV2105LT1 = 4U
MMBV2107LT1 = 4W
MMBV2108LT1 = 4X
MMBV2109LT1 = 4J
CASE 182–02, STYLE 1
TO–92 (TO–226AC)
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10
µAdc)
Reverse Voltage Leakage Current
(VR = 25 Vdc, TA = 25°C)
Diode Capacitance Temperature Coefficient
(VR = 4.0 Vdc, f = 1.0 MHz)
Symbol
V(BR)R
IR
TCC
Min
30
Typ
280
Max
0.1
Unit
Vdc
µAdc
ppm/°C
Thermal Clad is a trademark of the Bergquist Company
REV 1
Motorola Small–Signal Transistors, FETs and Diodes Device Data
©
Motorola, Inc. 1997
1

MMBV2107LT1 Related Products

MMBV2107LT1 MV2104 MV2109 MMBV2108LT1 MV2111
Description HF-UHF BAND, 22pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB HF-UHF BAND, 12pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC HF-UHF BAND, 33pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC HF-UHF BAND, 27pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-236AB HF-UHF BAND, 47pF, 30V, SILICON, ABRUPT VARIABLE CAPACITANCE DIODE, TO-226AC
package instruction R-PDSO-G3 O-PBCY-T2 O-PBCY-T2 R-PDSO-G3 O-PBCY-T2
Reach Compliance Code unknown unknown unknown unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY HIGH RELIABILITY
Minimum breakdown voltage 30 V 30 V 30 V 30 V 30 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode Capacitance Tolerance 10% 10% 10% 10% 10%
Minimum diode capacitance ratio 2.5 2.5 2.5 2.5 2.5
Nominal diode capacitance 22 pF 12 pF 33 pF 27 pF 47 pF
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE VARIABLE CAPACITANCE DIODE
frequency band HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JEDEC-95 code TO-236AB TO-226AC TO-226AC TO-236AB TO-226AC
JESD-30 code R-PDSO-G3 O-PBCY-T2 O-PBCY-T2 R-PDSO-G3 O-PBCY-T2
JESD-609 code e0 e0 e0 e0 e0
Number of components 1 1 1 1 1
Number of terminals 3 2 2 3 2
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND ROUND RECTANGULAR ROUND
Package form SMALL OUTLINE CYLINDRICAL CYLINDRICAL SMALL OUTLINE CYLINDRICAL
Maximum power dissipation 0.225 W 0.28 W 0.28 W 0.225 W 0.28 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum reverse current 0.1 µA 0.1 µA 0.1 µA 0.1 µA 0.1 µA
Reverse test voltage 25 V 25 V 25 V 25 V 25 V
surface mount YES NO NO YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE THROUGH-HOLE GULL WING THROUGH-HOLE
Terminal location DUAL BOTTOM BOTTOM DUAL BOTTOM
Varactor Diode Classification ABRUPT ABRUPT ABRUPT ABRUPT ABRUPT
Maker Motorola ( NXP ) - Motorola ( NXP ) Motorola ( NXP ) Motorola ( NXP )
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