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BDT65CF

Description
Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size268KB,7 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BDT65CF Overview

Transistor,

BDT65CF Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
package instruction,
Reach Compliance Codeunknown
Is SamacsysN
Maximum collector current (IC)12 A
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeNPN
Maximum power dissipation(Abs)22 W
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Nominal transition frequency (fT)10 MHz
Base Number Matches1

BDT65CF Related Products

BDT65CF BDT65AF BDT65BF
Description Transistor, Transistor, Transistor,
Is it Rohs certified? incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown
Is Samacsys N N N
Maximum collector current (IC) 12 A 12 A 12 A
Configuration DARLINGTON DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000 1000
JESD-609 code e0 e0 e0
Maximum operating temperature 150 °C 150 °C 150 °C
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 22 W 22 W 22 W
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Nominal transition frequency (fT) 10 MHz 10 MHz 10 MHz
Base Number Matches 1 1 1
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