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BUZ905DP

Description
16A, 160V, P-CHANNEL, Si, POWER, MOSFET, TO-264, TO-3PBL, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size39KB,4 Pages
ManufacturerSEMELAB
Download Datasheet Parametric Compare View All

BUZ905DP Overview

16A, 160V, P-CHANNEL, Si, POWER, MOSFET, TO-264, TO-3PBL, 3 PIN

BUZ905DP Parametric

Parameter NameAttribute value
MakerSEMELAB
Parts packaging codeTO-264
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Is SamacsysN
Shell connectionISOLATED
ConfigurationSINGLE
Minimum drain-source breakdown voltage160 V
Maximum drain current (ID)16 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-264AA
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Base Number Matches1
MAGNA
TEC
20.0
5.0
BUZ905DP
BUZ906DP
MECHANICAL DATA
Dimensions in mm
3.3 Dia.
P–CHANNEL
POWER MOSFET
POWER MOSFETS FOR
AUDIO APPLICATIONS
FEATURES
1
2.0
2
3
2.0
1.0
• HIGH SPEED SWITCHING
• P–CHANNEL POWER MOSFET
• SEMEFAB DESIGNED AND DIFFUSED
• HIGH VOLTAGE (160V & 200V)
• HIGH ENERGY RATING
1.2
0.6
2.8
3.4
• ENHANCEMENT MODE
• INTEGRAL PROTECTION DIODE
• N–CHANNEL ALSO AVAILABLE AS
BUZ900DP & BUZ901DP
• DOUBLE DIE PACKAGE FOR MAXIMUM
POWER AND HEATSINK SPACE
5.45 5.45
TO–3PBL
Pin 1 – Gate
Pin 2 – Source
Case is Source
Pin 3 – Drain
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
V
DSX
Drain – Source Voltage
V
GSS
I
D
I
D(PK)
P
D
T
stg
T
j
R
θJC
Gate – Source Voltage
Continuous Drain Current
Body Drain Diode
Total Power Dissipation
Storage Temperature Range
Maximum Operating Junction Temperature
Thermal Resistance Junction – Case
@ T
case
= 25°C
BUZ905DP
-160V
BUZ906DP
-200V
±14V
-16A
-16A
250W
–55 to 150°C
150°C
0.5°C/W
Magnatec.
Telephone (01455) 554711. Telex: 341927. Fax (01455) 552612.
Prelim. 2/95

BUZ905DP Related Products

BUZ905DP BUZ906DP
Description 16A, 160V, P-CHANNEL, Si, POWER, MOSFET, TO-264, TO-3PBL, 3 PIN 16A, 200V, P-CHANNEL, Si, POWER, MOSFET, TO-264, TO-3PBL, 3 PIN
Maker SEMELAB SEMELAB
Parts packaging code TO-264 TO-264
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 2 2
Reach Compliance Code compliant compliant
ECCN code EAR99 EAR99
Is Samacsys N N
Shell connection ISOLATED ISOLATED
Configuration SINGLE SINGLE
Minimum drain-source breakdown voltage 160 V 200 V
Maximum drain current (ID) 16 A 16 A
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-264AA TO-264AA
JESD-30 code R-PSFM-T3 R-PSFM-T3
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type P-CHANNEL P-CHANNEL
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Base Number Matches 1 1
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