BSX63SMD-JQR-BR4 datasheet, PDF

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BSX63SMD-JQR-BR4: Description3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size10KB，1 Pages; ManufacturerSEMELAB; Environmental Compliance

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BSX63SMD-JQR-BR4 Overview

3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN

BSX63SMD-JQR-BR4 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	SEMELAB
Parts packaging code	TO-276AB
package instruction	CHIP CARRIER, R-CBCC-N3
Contacts	3
Reach Compliance Code	compliant
ECCN code	EAR99
Is Samacsys	N
Shell connection	COLLECTOR
Maximum collector current (IC)	3 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	63
JEDEC-95 code	TO-276AB
JESD-30 code	R-CBCC-N3
JESD-609 code	e4
Number of components	1
Number of terminals	3
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	GOLD
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
Transistor component materials	SILICON
Nominal transition frequency (fT)	30 MHz
Base Number Matches	1

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BSX63SMD

Dimensions in mm (inches).

0.89

(0.035)

min.

3.70 (0.146)

3.41 (0.134)

3.70 (0.146)

3.41 (0.134)

3.60 (0.142)

Max.

4.14 (0.163)

3.84 (0.151)

Bipolar NPN Device in a

Hermetically sealed

Ceramic Surface Mount

Package for High

Reliability Applications

0.76

(0.030)

min.

16.02 (0.631)

15.73 (0.619)

Bipolar NPN Device.

CEO

= 60V

= 3A

10.69 (0.421)

10.39 (0.409)

9.67 (0.381)

9.38 (0.369)

11.58 (0.456)

11.28 (0.444)

0.50 (0.020)

0.26 (0.010)

All Semelab hermetically sealed products

can be processed in accordance with the

requirements of BS, CECC and JAN,

JANTX, JANTXV and JANS specifications

SMD1 (TO276AB)

PINOUTS

1 – Base

2 – Collector

3 – Emitter

Parameter

CEO

C(CONT)

Test Conditions

Min.

Typ.

Max.

Units

@ 1/1 (V

/ I

)

30M

160

* Maximum Working Voltage

This is a shortform datasheet. For a full datasheet please contact

sales@semelab.co.uk.

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab plc.

Telephone +44(0)1455 556565. Fax +44(0)1455 552612.

E-mail:

sales@semelab.co.uk

Website:

http://www.semelab.co.uk

Generated

15-Aug-02

BSX63SMD-JQR-BR4 Related Products

	BSX63SMD-JQR-BR4	BSX63SMD-JQR	BSX63SMD-JQR-A	BSX63SMD-JQRR4	BSX63SMD-JQR-AR4
Description	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN	3A, 60V, NPN, Si, POWER TRANSISTOR, TO-276AB, HERMETICALLY SEALED, CERAMIC, SMD1, 3 PIN
Is it lead-free?	Lead free	Contains lead	Contains lead	Lead free	Lead free
Is it Rohs certified?	conform to	incompatible	incompatible	conform to	conform to
Maker	SEMELAB	SEMELAB	SEMELAB	SEMELAB	SEMELAB
Parts packaging code	TO-276AB	TO-276AB	TO-276AB	TO-276AB	TO-276AB
package instruction	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3	CHIP CARRIER, R-CBCC-N3
Contacts	3	3	3	3	3
Reach Compliance Code	compliant	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR	COLLECTOR
Maximum collector current (IC)	3 A	3 A	3 A	3 A	3 A
Collector-emitter maximum voltage	60 V	60 V	60 V	60 V	60 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	63	63	63	63	63
JEDEC-95 code	TO-276AB	TO-276AB	TO-276AB	TO-276AB	TO-276AB
JESD-30 code	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3	R-CBCC-N3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	NPN	NPN	NPN	NPN	NPN
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	30 MHz	30 MHz	30 MHz	30 MHz	30 MHz
JESD-609 code	e4	-	-	e4	e4
Terminal surface	GOLD	-	-	GOLD	GOLD

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