DISCRETE SEMICONDUCTORS
DATA SHEET
MBD128
BAW56S
High-speed double diode array
Product specification
Supersedes data of 1997 Aug 27
File under Discrete Semiconductors, SC01
1997 Oct 21
Philips Semiconductors
Product specification
High-speed double diode array
FEATURES
•
Small plastic SMD package
•
High switching speed: max. 4 ns
•
Continuous reverse voltage:
max. 75 V
•
Repetitive peak reverse voltage:
max. 85 V
•
Repetitive peak forward current:
max. 450 mA.
APPLICATIONS
•
General purpose switching in e.g.
surface mounted circuits.
DESCRIPTION
The BAW56S consists of two dual
high-speed switching diodes with
common anodes, fabricated in planar
technology, and encapsulated in the
small SMD SOT363 plastic package.
1
Top view
Marking code:
A1t.
2
3
MSA370
BAW56S
PINNING
PIN
1
2
3
4
5
6
cathode (k1)
cathode (k2)
common anode (a1)
cathode (k3)
cathode (k4)
common anode (a2)
DESCRIPTION
6
5
4
handbook, halfpage
6
5
4
1
2
3
MGL159
Fig.1 Simplified outline (SOT363) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
Per diode
V
RRM
V
R
I
F
I
FRM
I
FSM
repetitive peak reverse voltage
continuous reverse voltage
continuous forward current
repetitive peak forward current
non-repetitive peak forward current
square wave; T
j
= 25
°C
prior to
surge; see Fig.4
t = 1
µs
t = 1 ms
t=1s
P
tot
T
stg
T
j
Note
1. One or more diodes loaded.
total power dissipation
storage temperature
junction temperature
T
s
= 60
°C;
note 1
−
−
−
−
−65
−65
4
1
0.5
350
+150
+150
A
A
A
mW
°C
°C
single diode loaded; see Fig.2
all diodes loaded; see Fig.2
−
−
−
−
−
85
75
250
100
450
V
V
mA
mA
mA
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
1997 Oct 21
2
Philips Semiconductors
Product specification
High-speed double diode array
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
forward voltage
see Fig.3
I
F
= 1 mA
I
F
= 10 mA
I
F
= 50 mA
I
F
= 150 mA
I
R
reverse current
see Fig.5
V
R
= 25 V
V
R
= 75 V
V
R
= 25 V; T
j
= 150
°C
V
R
= 75 V; T
j
= 150
°C
C
d
t
rr
V
fr
diode capacitance
reverse recovery time
forward recovery voltage
V
R
= 0; f = 1 MHz; see Fig.6
when switched from I
F
= 10 mA to I
R
= 10 mA;
R
L
= 100
Ω;
measured at I
R
= 1 mA; see Fig.7
when switched from I
F
= 10 mA; t
r
= 20 ns; see Fig.8
30
1
30
50
2
4
1.75
715
855
1
1.25
PARAMETER
CONDITIONS
BAW56S
MAX.
UNIT
mV
mV
V
V
nA
µA
µA
µA
pF
ns
V
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
Note
1. One or more diodes loaded.
PARAMETER
thermal resistance from junction to soldering point
note 1
CONDITIONS
VALUE
255
UNIT
K/W
1997 Oct 21
3
Philips Semiconductors
Product specification
High-speed double diode array
GRAPHICAL DATA
BAW56S
300
IF
(mA)
200
single diode loaded
MBK148
handbook, halfpage
300
MBG382
IF
(mA)
(1)
(2)
(3)
200
all diodes loaded
100
100
0
0
100
Ts (°C)
200
0
0
1
VF (V)
2
(1) T
j
= 150
°C;
typical values.
(2) T
j
= 25
°C;
typical values.
(3) T
j
= 25
°C;
maximum values.
Fig.2
Maximum permissible continuous forward
current as a function of soldering point
temperature.
Fig.3
Forward current as a function of
forward voltage.
10
2
handbook, full pagewidth
IFSM
(A)
MBG704
10
1
10
−1
1
Based on square wave currents.
T
j
= 25
°C
prior to surge.
10
10
2
10
3
tp (µs)
10
4
Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration.
1997 Oct 21
4
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