TetraFET
LAB
MECHANICAL DATA
Dimensions in mm.
0 .3 2
0 .2 4
0 .1 0
0 .0 2
16˚
m ax.
13˚
SEME
D2282UK
ROHS COMPLIANT
METAL GATE RF SILICON FET
GOLD METALLISED
MULTI-PURPOSE SILICON
DMOS RF FET
750mW – 6V – 1GHz
SINGLE ENDED
FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW C
rss
1 .7 0
m ax.
10˚
m ax.
6 .7
6 .3
3 .1
2 .9
4
3 .7 7 .3
3 .3 6 .7
• SIMPLE BIAS CIRCUITS
• LOW NOISE (Typical < 2dB NF)
• HIGH GAIN – 8dB MINIMUM
• SURFACE MOUNT
3
1
2
1 .0 5
0 .8 5
2 .3 0
4 .6 0
0 .8 0
0 .6 0
APPLICATIONS
•
VHF/UHF COMMUNICATIONS
from DC to 2.5 GHz
SOT–223
PIN 1
PIN 3
GATE
SOURCE
PIN 2
PIN 4
DRAIN
DRAIN
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
P
D
BV
DSS
BV
GSS
I
D(sat)
T
stg
T
j
Power Dissipation
Drain – Source Breakdown Voltage
Gate – Source Breakdown Voltage
Drain Current
Storage Temperature
Maximum Operating Junction Temperature
2W
40V
±20V
400mA
–65 to 125°C
150°C
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
LAB
ELECTRICAL CHARACTERISTICS
(T
case
= 25°C unless otherwise stated)
Parameter
Test Conditions
Min.
BV
DSS
I
DSS
I
GSS
g
fs
G
PS
η
VSWR
C
iss
C
oss
C
rss
Drain–Source Breakdown
Voltage
Zero Gate Voltage
Drain Current
Gate Leakage Current
Forward Transconductance*
Common Source Power Gain
Drain Efficiency
Load Mismatch Tolerance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V
GS
= 0
I
D
= 10mA
V
DS
= 12.5V
V
GS
= 0
V
GS
= 20V
I
D
= 10mA
V
DS
= 10V
P
O
= 750mW
V
DS
= 6V
f = 1GHz
V
DS
= 0V
f = 1MHz
V
DS
= 12.5V
f = 1MHz
V
DS
= 12.5V
f = 1MHz
V
GS
= 0
V
GS
= 0
V
GS
= –5V
I
DQ
= 75mA
V
DS
= 0
V
DS
= V
GS
I
D
= 0.2A
1
0.18
8
40
10:1
12
10
1
pF
40
1
1
5
SEME
D2282UK
Typ.
Max. Unit
V
mA
µA
V
mhos
dB
%
—
V
GS(th)
Gate Threshold Voltage*
* Pulse Test:
Pulse Duration = 300
µs
, Duty Cycle
≤
2%
THERMAL DATA
R
THj–case
Thermal Resistance Junction – Case
Max. 70°C / W
Semelab plc.
Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 7/96
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