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BYW29F200

Description
Rectifier Diode, 1 Element, 7.3A, 200V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size502KB,9 Pages
ManufacturerNorth American Philips Discrete Products Div
Download Datasheet Parametric Compare View All

BYW29F200 Overview

Rectifier Diode, 1 Element, 7.3A, 200V V(RRM),

BYW29F200 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNorth American Philips Discrete Products Div
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.3 V
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components1
Maximum operating temperature150 °C
Maximum output current7.3 A
Maximum repetitive peak reverse voltage200 V
Maximum reverse recovery time0.025 µs
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Base Number Matches1

BYW29F200 Related Products

BYW29F200 BYW29F100 BYW29F150
Description Rectifier Diode, 1 Element, 7.3A, 200V V(RRM), Rectifier Diode, 1 Element, 7.3A, 100V V(RRM), Rectifier Diode, 1 Element, 7.3A, 150V V(RRM),
Is it Rohs certified? incompatible incompatible incompatible
Maker North American Philips Discrete Products Div North American Philips Discrete Products Div North American Philips Discrete Products Div
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE SINGLE SINGLE
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 1.3 V 1.3 V 1.3 V
JESD-609 code e0 e0 e0
Maximum non-repetitive peak forward current 100 A 100 A 100 A
Number of components 1 1 1
Maximum operating temperature 150 °C 150 °C 150 °C
Maximum output current 7.3 A 7.3 A 7.3 A
Maximum repetitive peak reverse voltage 200 V 100 V 150 V
Maximum reverse recovery time 0.025 µs 0.025 µs 0.025 µs
surface mount NO NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Is Samacsys N N -
Base Number Matches 1 1 -
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