LESHAN RADIO COMPANY, LTD.
General Purpose Transistors
PNP Silicon
Featrues
Pb-Free Package is Available.
ORDERING INFORMATION
Device
LBCW61XLT1G
LBCW61XLT3G
LBCW61BLT1G
LBCW61CLT1G
LBCW61DLT1G
Shipping
3000/Tape & Reel
10000/Tape & Reel
1
3
MAXIMUM RATINGS
Rating
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Symbol
V
CEO
V
CBO
V
EBO
2
Value
– 32
– 32
– 5.0
– 100
Unit
Vdc
Vdc
Vdc
mAdc
CASE 318–08, STYLE 6
SOT–23 (TO–236AB)
3
COLLECTOR
I
C
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation FR– 5 Board, (1)
T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Total Device Dissipation
Alumina Substrate, (2) T
A
= 25°C
Derate above 25°C
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
R
θJA
T
J
, T
stg
Symbol
P
D
Max
225
1.8
R
θJA
P
D
556
300
2.4
417
–55 to +150
Unit
mW
mW/°C
°C/W
mW
mW/°C
°C/W
°C
1
BASE
2
EMITTER
DEVICE MARKING
LBCW61BLT1G = BB, LBCW61CLT1G = BC, LBCW61DLT1G = BD
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted.)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(I
C
= –2.0 mAdc, I
B
= 0 )
Emitter–Base Breakdown Voltage
(I
E
= –1.0
µAdc,
I
C
= 0)
Collector Cutoff Current
(V
CE
= –32 Vdc, )
(V
CE
= –32 Vdc, T
A
= 150°C)
1. FR– 5 = 1.0 x 0.75 x 0.062 in.
2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.
V
(BR)EBO
V
(BR)CEO
– 32
—
Vdc
– 5.0
—
Vdc
I
CES
—
—
–20
–20
nAdc
µAdc
1/7
LESHAN RADIO COMPANY, LTD.
LBCW61BLT1G LBCW61CLT1G LBCW61DLT1G
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Symbol
h
FE
BCW61B
BCW61C
BCW61D
h
FE
BCW61B
BCW61C
BCW61D
( I
C
= – 50 mAdc, V
CE
= – 1.0 Vdc )
BCW61B
BCW61C
BCW61D
AC Current Gain
( V
CE
= – 5.0Vdc, I
C
= – 2.0 mAdc,
f= 1.0 kHz )
Collector–Emitter Saturation Voltage
( I
C
= – 50 mAdc, I
B
= – 1.25 mAdc )
( I
C
= – 10 mAdc, I
B
= – 0.25 mAdc )
Base–Emitter Saturation Voltage
( I
C
= – 50 mAdc, I
B
= – 1.25 mAdc )
( I
C
= – 10 mAdc, I
B
= – 0.25 mAdc )
Base–Emitter On Voltage
( I
C
= – 2.0 mAdc, V
CE
= – 5.0 Vdc )
h
FE
BCW61B
BCW61C
BCW61D
V
CE(sat)
—
—
V
BE(sat)
– 0.68
–0.6
V
BE(on)
– 0.6
– 0.75
– 1.05
– 0.85
Vdc
– 0.55
– 0.25
Vdc
175
250
350
350
500
700
Vdc
h
FE
80
100
100
—
—
—
—
140
250
380
310
460
630
—
30
40
100
—
—
—
—
Min
Max
Unit
—
ON CHARACTERISTICS
DC Current Gain
( I
C
= – 10
µAdc,
V
CE
= – 5.0 Vdc )
( I
C
= – 2.0 mAdc, V
CE
= – 5.0 Vdc )
SM
SMALL–SIGNAL CHARACTERISTICS
Output Capacitance
(V
CE
= – 10 Vdc, I
C
= 0, f = 1.0 MHz)
C
obo
—
—
6.0
6.0
pF
dB
Noise Figure
NF
(V
CE
= – 5.0 Vdc, I
C
= – 0.2 mAdc, R
S
= 2.0 kΩ, f = 1.0 kHz, BW = 200 Hz)
SWITCHING CHARACTERISTICS
Turn–On Time
(I
C
= – 10 mAdc, I
B1
= – 1.0 mAdc)
t
on
—
—
150
800
ns
ns
Turn–Off Time
t
off
(I
B2
=– 1.0 mAdc, V
BB
= – 3.6 Vdc, R
1
= R
2
= 5.0 kΩ, R
L
= 990
Ω)
2/7
LESHAN RADIO COMPANY, LTD.
LBCW61BLT1G LBCW61CLT1G LBCW61DLT1G
TYPICAL NOISE CHARACTERISTICS
(V
CE
= –5.0 Vdc, T
A
= 25°C)
10
1.0
BANDWIDTH = 1.0 Hz
~
R ~0
7.0
5.0
BANDWIDTH = 1.0 Hz
~
R ~
S
e
n
, NOISE VOLTAGE (nV)
I
n
, NOISE CURRENT (pA)
7.0
S
I
C
=10
µA
30µA
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
I
C
=1.0mA
300µA
100µA
30µA
10µA
10
20
50
100
200
500
1.0k
2.0k
5.0k
10 k
5.0
3.0
1.0mA
2.0
100µA
300µA
1.0
10
20
50
100
200
500 1.0k
2.0k
5.0k
10 k
f, FREQUENCY (Hz)
f, FREQUENCY (Hz)
Figure 1. Noise Voltage
Figure 2. Noise Current
NOISE FIGURE CONTOURS
(V
CE
= –5.0 Vdc, T
A
= 25°C)
1.0M
1.0M
R
S
, SOURCE RESISTANCE (
Ω
)
R
S
, SOURCE RESISTANCE (
Ω
)
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
BANDWIDTH = 1.0 Hz
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
BANDWIDTH = 1.0 Hz
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0dB
200
300
500 700 1.0K
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
200
300
500 700 1.0K
I
C
, COLLECTOR CURRENT (µA)
I
C
, COLLECTOR CURRENT (µA)
Figure 3. Narrow Band, 100 Hz
1.0M
Figure 4. Narrow Band, 1.0 kHz
R
S
, SOURCE RESISTANCE (
Ω
)
500k
200k
100k
50k
20k
10k
5.0k
2.0k
1.0k
500
200
100
10
20
30
50
70
100
200
10 Hz to 15.7KHz
Noise Figure is Defined as:
NF = 20 log
10
0.5 dB
1.0 dB
2.0 dB
3.0 dB
5.0 dB
300
500 700 1.0K
( –––––––––––––––)
4KTR
S
e
n 2
+4KTR
S
+I
n2
R
S2
1/ 2
e
n
= Noise Voltage of the Transistor referred to the input. (Figure 3)
I
n
= Noise Current of the Transistor referred to the input. (Figure 4)
K = Boltzman’s Constant (1.38 x 10
–23
j/°K)
T = Temperature of the Source Resistance (°K)
R
s
= Source Resistance (
Ω
)
I
C
, COLLECTOR CURRENT (µA)
Figure 5. Wideband
8
3/7
LESHAN RADIO COMPANY, LTD.
LBCW61BLT1G LBCW61CLT1G LBCW61DLT1G
TYPICAL STATIC CHARACTERISTICS
V
CE
, COLLECTOR– EMITTER VOLTAGE (VOLTS)
0.8
T
A
= 25°C
BCW61
I
C
= 1.0 mA
10 mA
50 mA
100 mA
I
C
, COLLECTOR CURRENT (mA)
1.0
100
80
T
A
= 25°C
PULSE WIDTH =300
µs
DUTY CYCLE<2.0%
300µA
I
B
= 400
µA
350µA
250µA
200µA
150µA
0.6
60
0.4
40
100µA
50
µA
0.2
20
0
0.002 0.0050.010.02
0.05 0.1 0.2
0.5 1.0 2.0
5.0
10
20
0
0
5.0
10
15
20
25
30
35
40
I
B
, BASE CURRENT (mA)
V
CE
, COLLECTOR–EMITTER VOLTAGE (VOLTS)
Figure 6. Collector Saturation Region
θ
V
, TEMPERATURE COEFFICIENTS (mV/°C)
1.4
1.6
Figure 7. Collector Characteristics
T
J
= 25°C
1.2
*APPLIES for I
C
/ I
B
< h
FE
/ 2
0.8
V, VOLTAGE (VOLTS)
1.0
0.8
0.6
0.4
0.2
0
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
∗ θ
VC
for V
CE(sat)
0
25°C to 125°C
–55°C to 25°C
V
BE(sat)
@ I
C
/I
B
= 10
V
BE(on)
@ V
CE
= 1.0 V
–0.8
25°C to 125°C
–1.6
V
CE(sat)
@ I
C
/I
B
= 10
θ
VB
for V
BE
–55°C to 25°C
–2.4
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 8. “On” Voltages
Figure 9. Temperature Coefficients
4/7
LESHAN RADIO COMPANY, LTD.
LBCW61BLT1G LBCW61CLT1G LBCW61DLT1G
TYPICAL DYNAMIC CHARACTERISTICS
500
300
200
1000
V
CC
= 3.0 V
I
C
/I
B
= 10
T
J
= 25°C
700
500
300
200
100
t
s
V
CC
= –3.0 V
I
C
/I
B
= 10
I
B1
=I
B2
T
J
= 25°C
t, TIME (ns)
100
70
50
t, TIME (ns)
30
20
10
7.0
5.0
1.0
2.0
3.0
5.0
7.0
10
20
30
50
70
100
70
50
30
20
10
-1.0
-2.0 -3.0
-5.0 -7.0 -10
-20
-30
-50 -70 -100
t
f
t
d
@ V
BE(off)
= 0.5 V
t
f
I
C
, COLLECTOR CURRENT (mA)
f
T
, CURRENT– GAIN — BANDWIDTH PRODUCT (MHz)
I
C
, COLLECTOR CURRENT (mA)
Figure 10. Turn–On Time
500
10.0
Figure 11. Turn–Off Time
T
J
= 25°C
300
T
J
= 25°C
V
CE
=20 V
5.0 V
C, CAPACITANCE (pF)
7.0
C
ib
5.0
200
3.0
100
2.0
C
ob
70
50
0.5
0.7
1.0
2.0
3.0
5.0 7.0
10
20
30
50
1.0
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
I
C
, COLLECTOR CURRENT (mA)
V
R
, REVERSE VOLTAGE (VOLTS)
Figure 12. Current–Gain — Bandwidth Product
r( t) TRANSIENT THERMAL RESISTANCE(NORMALIZED)
1.0
0.7
0.5
0.3
0.2
Figure 13. Capacitance
D = 0.5
0.2
0.1
FIGURE 19A
0.05
P
(pk)
0.02
0.01
t
SINGLE PULSE
1
0.1
0.07
0.05
0.03
0.02
0.01
0.01
DUTY CYCLE, D = t
1
/ t
2
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
(SEE AN–569)
t
2
Z
θJA(t)
= r(t) • R
θJA
T
J(pk)
– T
A
= P
(pk)
Z
θJA(t)
1.0k
2.0k
5.0k
10k
20k
50k
100k
0.02
0.05
0.1
0.2
0.5
1.0
2.0
5.0
10
20
50
100
200
500
t, TIME (ms)
Figure 14. Thermal Response
5/7
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