LBCW61CLT1G datasheet, PDF - EEWORLD Datasheet

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LBCW61CLT1G: DescriptionTransistor,; CategoryDiscrete semiconductor The transistor; File Size484KB，10 Pages; ManufacturerLRC; Websitehttp://www.lrc.cn; Environmental Compliance

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LBCW61CLT1G Overview

Transistor,

LBCW61CLT1G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	LRC
package instruction	,
Reach Compliance Code	unknown
Maximum collector current (IC)	0.1 A
Configuration	Single
Minimum DC current gain (hFE)	250
Maximum operating temperature	150 °C
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.3 W
surface mount	YES

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LESHAN RADIO COMPANY, LTD.

General Purpose Transistors

PNP Silicon

Featrues

Pb-Free Package is Available.

ORDERING INFORMATION

Device

LBCW61XLT1G

LBCW61XLT3G

LBCW61BLT1G

LBCW61CLT1G

LBCW61DLT1G

Shipping

3000/Tape & Reel

10000/Tape & Reel

MAXIMUM RATINGS

Rating

Collector–Emitter Voltage

Collector–Base Voltage

Emitter–Base Voltage

Collector Current — Continuous

Symbol

CEO

CBO

EBO

Value

– 32

– 5.0

– 100

Unit

Vdc

mAdc

CASE 318–08, STYLE 6

SOT–23 (TO–236AB)

COLLECTOR

THERMAL CHARACTERISTICS

Characteristic

Total Device Dissipation FR– 5 Board, (1)

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Total Device Dissipation

Alumina Substrate, (2) T

= 25°C

Derate above 25°C

Thermal Resistance, Junction to Ambient

Junction and Storage Temperature

θJA

, T

stg

Symbol

Max

225

1.8

θJA

556

300

2.4

417

–55 to +150

Unit

mW/°C

°C/W

mW/°C

°C/W

°C

BASE

EMITTER

DEVICE MARKING

LBCW61BLT1G = BB, LBCW61CLT1G = BC, LBCW61DLT1G = BD

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted.)

Characteristic

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector–Emitter Breakdown Voltage

= –2.0 mAdc, I

= 0 )

Emitter–Base Breakdown Voltage

= –1.0

µAdc,

= 0)

Collector Cutoff Current

= –32 Vdc, )

= –32 Vdc, T

= 150°C)

1. FR– 5 = 1.0 x 0.75 x 0.062 in.

2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina.

(BR)EBO

(BR)CEO

– 32

—

Vdc

– 5.0

—

Vdc

CES

—

–20

nAdc

µAdc

1/7

LBCW61CLT1G Related Products

	LBCW61CLT1G	LBCW61BLT3G	LBCW61BLT1G	LBCW61CLT3G	LBCW61DLT3G	LBCW61DLT1G
Description	Transistor,	Transistor,	Transistor,	Transistor,	Transistor,	Transistor,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknow
Maximum collector current (IC)	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A	0.1 A
Configuration	Single	Single	Single	Single	Single	Single
Minimum DC current gain (hFE)	250	140	140	250	380	380
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C	150 °C
Polarity/channel type	PNP	PNP	PNP	PNP	PNP	PNP
Maximum power dissipation(Abs)	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W	0.3 W
surface mount	YES	YES	YES	YES	YES	YES
Maker	LRC	LRC	LRC	-	LRC	LRC

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