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OM6112SAT

Description
Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,
CategoryDiscrete semiconductor    The transistor   
File Size186KB,4 Pages
ManufacturerOmnirel Corp.
Download Datasheet Parametric View All

OM6112SAT Overview

Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA,

OM6112SAT Parametric

Parameter NameAttribute value
MakerOmnirel Corp.
Reach Compliance Codeunknown
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage500 V
Maximum drain current (ID)8 A
Maximum drain-source on-resistance0.85 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)32 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
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