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OM6539SP1

Description
Insulated Gate Bipolar Transistor, 49A I(C), 500V V(BR)CES, N-Channel, CERAMIC PACKAGE-6
CategoryDiscrete semiconductor    The transistor   
File Size252KB,8 Pages
ManufacturerOmnirel Corp.
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OM6539SP1 Overview

Insulated Gate Bipolar Transistor, 49A I(C), 500V V(BR)CES, N-Channel, CERAMIC PACKAGE-6

OM6539SP1 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerOmnirel Corp.
package instructionCERAMIC PACKAGE-6
Reach Compliance Codeunknown
Is SamacsysN
Other featuresULTRA FAST
Shell connectionISOLATED
Maximum collector current (IC)49 A
Collector-emitter maximum voltage500 V
ConfigurationSINGLE WITH BUILT-IN ISOLATED DIODE
Gate emitter threshold voltage maximum4 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSFM-T6
JESD-609 codee0
Number of components1
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)147 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)170 ns
Nominal on time (ton)56 ns
Base Number Matches1
This Material Copyrighted By Its Respective Manufacturer

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