DISCRETE SEMICONDUCTORS
DATA SHEET
M3D425
PBSS2540F
40 V low V
CEsat
NPN transistor
Product specification
2001 Oct 31
Philips Semiconductors
Product specification
40 V low V
CEsat
NPN transistor
FEATURES
•
Low collector-emitter saturation voltage
•
High current capability
•
Improved thermal behaviour due to flat leads
•
Enhanced performance over SOT23 general purpose
transistors.
APPLICATIONS
•
General purpose switching and muting
•
Low frequency driver circuits
•
Audio frequency general purpose amplifier applications
•
Battery driven equipment (mobile phones, video
cameras, hand-held devices).
DESCRIPTION
handbook, halfpage
PBSS2540F
QUICK REFERENCE DATA
SYMBOL
V
CEO
I
C
I
CM
R
CEsat
PINNING
PIN
1
2
3
base
emitter
collector
DESCRIPTION
PARAMETER
collector-emitter voltage
collector current (DC)
peak collector current
equivalent on-resistance
MAX.
40
500
1
<500
UNIT
V
mA
A
mΩ
3
3
1
2
MAM410
NPN low V
CEsat
transistor in a SC-89 (SOT490) plastic
package.
PNP complement: PBSS3540F.
1
2
MARKING
TYPE NUMBER
PBSS2540F
MARKING CODE
2C
Fig.1
Top view
Simplified outline (SC-89; SOT490) and
symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
BM
P
tot
T
stg
T
j
T
amb
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C
CONDITIONS
open emitter
open base
open collector
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAX.
40
40
6
500
1
100
250
+150
150
+150
V
V
V
mA
A
mA
mW
°C
°C
°C
UNIT
2001 Oct 31
2
Philips Semiconductors
Product specification
40 V low V
CEsat
NPN transistor
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
PARAMETER
CONDITIONS
MAX.
500
PBSS2540F
UNIT
K/W
thermal resistance from junction to ambient in free air
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
I
EBO
h
FE
PARAMETER
collector-base cut-off current
emitter-base cut-off current
DC current gain
CONDITIONS
V
CB
= 30 V; I
E
= 0
V
CB
= 30 V; I
E
= 0; T
j
= 150
°C
V
EB
= 5 V; I
C
= 0
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 100 mA; note 1
V
CE
= 2 V; I
C
= 500 mA; note 1
V
CEsat
collector-emitter saturation
voltage
I
C
= 10 mA; I
B
= 0.5 mA
I
C
= 100 mA; I
B
= 5 mA
I
C
= 200 mA; I
B
= 10 mA
I
C
= 500 mA; I
B
= 50 mA; note 1
R
CEsat
V
BEsat
V
BEon
f
T
C
c
Note
1. Pulse test: t
p
≤
300
µs; δ ≤
0.02.
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
I
C
= 500 mA; I
B
= 50 mA; note 1
I
C
= 500 mA; I
B
= 50 mA; note 1
V
CE
= 2 V; I
C
= 100 mA; note 1
I
C
= 100 mA; V
CE
= 5 V; f = 100 MHz
V
CB
= 10 V; I
E
= I
e
= 0; f = 1 MHz
MIN.
−
−
−
200
100
50
−
−
−
−
−
−
−
250
−
TYP.
−
−
−
−
−
−
−
−
−
−
380
−
−
450
−
MAX.
100
50
100
−
−
−
50
100
200
250
<500
1.2
1.1
−
6
mV
mV
mV
mV
mΩ
V
V
MHz
pF
UNIT
nA
µA
nA
2001 Oct 31
3
Philips Semiconductors
Product specification
40 V low V
CEsat
NPN transistor
PBSS2540F
handbook, halfpage
1200
MHC082
hFE
1000
(1)
1200
handbook, halfpage
VBE
(mV)
1000
MHC085
800
800
600
(2)
(2)
(1)
600
400
(3)
200
400
(3)
0
10
−1
1
10
10
2
IC (mA)
10
3
200
10
−1
1
10
10
2
IC (mA)
10
3
V
CE
= 2 V.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
V
CE
= 2 V.
(1) T
amb
=
−55 °C.
(2) T
amb
= 25
°C.
(3) T
amb
= 150
°C.
Fig.2
DC current gain as a function of collector
current; typical values.
Fig.3
Base-emitter voltage as a function of
collector current; typical values.
10
3
handbook, halfpage
VCEsat
(mV)
MHC086
handbook, halfpage
1200
MHC084
VBEsat
(mV)
1000
800
10
2
(1)
(1)
(2)
600
(2)
(3)
400
(3)
10
10
−1
1
10
10
2
IC (mA)
10
3
200
10
−1
1
10
10
2
IC (mA)
10
3
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
Fig.4
Collector-emitter saturation voltage as a
function of collector current; typical values.
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2001 Oct 31
4
Philips Semiconductors
Product specification
40 V low V
CEsat
NPN transistor
PBSS2540F
1200
handbook, halfpage
IC
(mA)
1000
MHC083
handbook, halfpage
(1)
(2)
(3)
(5)
(4)
(6)
(8)
10
3
MHC087
RCEsat
(Ω)
10
2
800
(7)
600
(9)
(10)
10
(1)
(2)
(3)
400
1
200
10
−1
10
−1
I
C
/I
B
= 20.
(1) T
amb
= 150
°C.
(2) T
amb
= 25
°C.
(3) T
amb
=
−55 °C.
0
0
1
2
3
4
VCE (V)
(1)
(2)
(3)
(4)
I
B
= 25 mA.
I
B
= 22.5 mA.
I
B
= 20 mA.
I
B
= 17.5 mA.
5
1
10
10
2
IC (mA)
10
3
(5) I
B
= 15 mA.
(6) I
B
= 12.5 mA.
(7) I
B
= 10 mA.
(8) I
B
= 7.5 mA.
(9) I
B
= 5.0 mA.
(10) I
B
= 2.5 mA.
Fig.7
Fig.6
Collector current as a function of
collector-emitter voltage; typical values.
Collector-emitter equivalent on-resistance
as a function of collector current; typical
values.
2001 Oct 31
5
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