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RD6.8EB3

Description
Zener Diode, 6.84V V(Z), 2%, 0.5W
CategoryDiscrete semiconductor    diode   
File Size170KB,4 Pages
ManufacturerRugao Dachang Electronics Co., Ltd.
Download Datasheet Parametric View All

RD6.8EB3 Overview

Zener Diode, 6.84V V(Z), 2%, 0.5W

RD6.8EB3 Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance8 Ω
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation0.5 W
Nominal reference voltage6.84 V
surface mountNO
Maximum voltage tolerance2%
Working test current20 mA
Base Number Matches1
SIYU
R
DO-35 Glass
max. 0.52
RD_EB Series
特征 Features
·反向漏电流小。
Low reverse leakage
·½纳击穿阻抗½。
low zener impedance
min.
27.5
·最大功率耗散500mW。
maximum power dissipation of 500 mW
·高稳定性和可靠性。
High stability and high reliability
1.8 0.2
3.8 0.2
CATHODE
MARK
机械数据
Mechanical Data
封装: DO-35 玻璃封装
Case: DO-35 Glass Case
极性: 色环端为负极
Polarity: Color band denotes cathode end
安装½½: 任意
Mounting Position: Any
min.
27.5
Unit:mm
极限值和温度特性
TA = 25℃
除非另有规定。
Maximum Ratings & Thermal Characteristics
参数
Parameter
Power Dissipation
Operating junction temperature
Storage temperature range
Ratings at 25℃ ambient temperature unless otherwise specified.
符号
Symbols
数值
Value
500
175
单½
Unit
mW
功率消耗
工½结温
存储温度
Pd
T
j
Ts
-50 --- +150
电特性
TA = 25℃
除非另有规定。
Electrical Characteristics
Ratings at 25℃ ambient temperature unless otherwise specified.
稳压范围
型号
Type
Zener Voltage
反向特性
Reverese Current
动态电阻
Dynamic Resistance
V
Z
(V)
最小值
MIN.
最大值
MAX.
B
1.88
1.88
2.02
2.12
2.12
2.22
2.33
2.33
2.43
2.54
2.54
2.69
2.20
2.10
2.20
2.41
2.30
2.41
2.63
2.52
2.63
2.91
2.75
2.91
测试条件
Test condition
I
R
(µA)
最大值
MAX.
测试条件
Test condition
rd(Ω)
最大值
MAX.
测试条件
Test condition
I
Z
(mA)
V
R
(V)
0.5
I
Z
(mA)
RD2.0E B1
B2
B
RD2.2E
B1
B2
B
RD2.4E B1
B2
B
RD2.7E
B1
B2
20
120
140
20
20
120
0.7
120
20
20
120
1.0
100
20
20
100
1.0
100
20
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