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Datasheet> All Categories > Discrete semiconductor> The transistor> ZUMT2222A
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ZUMT2222A

Description
Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size29KB，2 Pages
ManufacturerZetex Semiconductors
Websitehttp://www.zetex.com/
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ZUMT2222A Overview

Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, SOT-323, 3 PIN

ZUMT2222A Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage40 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G3
JESD-609 codee0
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.33 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)300 MHz
Maximum off time (toff)285 ns
Maximum opening time (tons)35 ns
Base Number Matches1

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SOT323 NPN SILICON PLANAR
SWITCHING TRANSISTOR
ISSUE 1 – NOVEMBER 1998
FEATURES
*
Fast switching
PARTMARKING DETAIL
COMPLEMENTARY TYPE
– T16
– ZUMT2907A
ZUMT2222A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Power Dissipation at T
amb
=25°C
Operating and Storage Temperature Range
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
j
:T
stg
MAX.
UNIT
V
V
V
10
10
10
10
0.3
1.0
0.6
35
50
75
35
100
50
40
1.2
2.0
nA
µA
nA
nA
V
V
V
V
VALUE
75
40
6
600
330
-55 to +150
UNIT
V
V
V
mA
mW
°C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
Collector-Emitter Cut-Off
Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Static Forward Current
Transfer Ratio
SYMBOL
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CEX
V
CE(sat)
V
BE(sat)
h
FE
MIN.
75
40
6
CONDITIONS.
I
C
=10µA, I
E
=0
I
C
=10mA, I
B
=0
I
E
=10µA, I
C
=0
V
CB
=60V, I
E
=0
V
CB
=60V, I
E
=0, T
amb
=150°C
V
EB
=3V, I
C
=0
V
CE
=60V, V
EB(off)
=3V
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=150mA, I
B
=15mA*
I
C
=500mA, I
B
=50mA*
I
C
=0.1mA, V
CE
=10V*
I
C
=1mA, V
CE
=10V
I
C
=10mA, V
CE
=10V*
I
C
=10mA, V
CE
=10V, T
amb
=-55°C
I
C
=150mA, V
CE
=10V*
I
C
=150mA, V
CE
=1V*
I
C
=500mA, V
CE
=10V*
300
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle
≤
2%
Spice parameter data is available upon request for this device

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