
Power Field-Effect Transistor, 7.5A I(D), 1000V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
| Parameter Name | Attribute value |
| Is it Rohs certified? | conform to |
| package instruction | FLANGE MOUNT, R-MSFM-T3 |
| Reach Compliance Code | compliant |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 1000 V |
| Maximum drain current (ID) | 7.5 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JESD-30 code | R-MSFM-T3 |
| JESD-609 code | e1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | METAL |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | N-CHANNEL |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN SILVER COPPER |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |