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BUZ50A-TO220MR1

Description
Power Field-Effect Transistor, 7.5A I(D), 1000V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
CategoryDiscrete semiconductor    The transistor   
File Size63KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Environmental Compliance
Download Datasheet Parametric View All

BUZ50A-TO220MR1 Overview

Power Field-Effect Transistor, 7.5A I(D), 1000V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

BUZ50A-TO220MR1 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionFLANGE MOUNT, R-MSFM-T3
Reach Compliance Codecompliant
ConfigurationSINGLE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (ID)7.5 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-MSFM-T3
JESD-609 codee1
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Package body materialMETAL
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Base Number Matches1

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