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T508N1000TOF

Description
Silicon Controlled Rectifier, 509000mA I(T), 1000V V(DRM),
CategoryAnalog mixed-signal IC    Trigger device   
File Size600KB,5 Pages
ManufacturerVishay Telefunken (Vishay)
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

T508N1000TOF Overview

Silicon Controlled Rectifier, 509000mA I(T), 1000V V(DRM),

T508N1000TOF Parametric

Parameter NameAttribute value
Reach Compliance Codeunknown
Nominal circuit commutation break time250 µs
Critical rise rate of minimum off-state voltage1000 V/us
Maximum DC gate trigger current200 mA
Maximum DC gate trigger voltage2 V
Maximum holding current300 mA
Maximum leakage current50 mA
On-state non-repetitive peak current6900 A
Maximum on-state voltage1.92 V
Maximum on-state current509000 A
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Off-state repetitive peak voltage1000 V
surface mountNO
Trigger device typeSCR
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