APM2701C
Dual Enhancement Mode MOSFET (N and P-Channel)
Features
•
N-Channel
20V/3A,
R
DS(ON)
=50mΩ(typ.) @ V
GS
=4.5V
R
DS(ON)
=90mΩ(typ.) @ V
GS
=2.5V
Pin Description
•
P-Channel
-20V/-1.5A,
R
DS(ON)
=145mΩ(typ.) @ V
GS
=-4.5V
R
DS(ON)
=180mΩ(typ.) @ V
GS
=-2.5V
Top View of SOT-26
(6)D 1
(2)S2
•
•
•
Super High Dense Cell Design
Reliable and Rugged
Lead Free Available (RoHS Compliant)
(1)G 1
(3)G2
Applications
•
Power Management in Notebook Computer,
Portable Equipment and Battery Powered
Systems
(5)S 1
(4)D2
N-Channel MOSFET
P-Channel MOSFET
Ordering and Marking Information
APM2701
Lead Free Code
Handling Code
Tem p. Range
Package Code
Package Code
C : SO T-26
O perating Junction Tem p. Range
C : -55 to 150°C
Handling Code
TU : Tube
TR : Tape & Reel
Lead Free Code
L : Lead Free Device Blank : O riginal Device
XXXXX - Date Code
APM2701C :
M71X
Note: ANPEC lead-free products contain molding compounds/die attach materials and 100% matte in plate termina-
tion finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations.
ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classifica-
tion at lead-free peak reflow temperature.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise
customers to obtain the latest version of relevant information to verify before placing orders.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
1
www.anpec.com.tw
APM2701C
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
*
I
DM
*
I
S
*
T
J
T
STG
P
D
*
R
θJA
*
Note:
*Surface Mounted on 1in
2
pad area, t
≤
10sec.
(T
A
= 25°C unless otherwise noted)
N Channel
20
±10
3
V
GS
=±4.5V
10
1
150
-55 to 150
T
A
=25°C
T
A
=100°C
0.83
0.3
150
W
°C/W
P Channel
-20
±10
-1.5
-6
-1
V
A
A
°C
Unit
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
300µs Pulsed Drain Current
Diode Continuous Forward Current
Maximum Junction Temperature
Storage Temperature Range
Power Dissipation
Thermal Resistance-Junction to Ambient
Electrical Characteristics
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM2701C
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics
BV
DSS
Drain-Source Breakdown
Voltage
V
GS
=0V, I
DS
=250µA
V
GS
=0V, I
DS
=-250µA
V
DS
=16V, V
GS
=0V
I
DSS
Zero Gate Voltage Drain
Current
T
J
=85°C
V
DS
=-16V, V
GS
=0V
T
J
=85°C
V
GS(th)
I
GSS
Gate Threshold Voltage
Gate Leakage Current
V
DS
=V
GS
, I
DS
=250µA
V
DS
=V
GS
, I
DS
=-250µA
V
GS
=±10V, V
DS
=0V
V
GS
=4.5V, I
DS
=3A
R
DS(ON)
a
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
20
-20
1
30
-1
-30
0.45
-0.45
0.6
-0.6
1
-1
±100
±100
50
145
90
180
70
190
110
235
V
µA
V
nA
Drain-Source On-State
Resistance
V
GS
=-4.5V, I
DS
=-1.5A
V
GS
=2.5V, I
DS
=1.7A
V
GS
=-2.5V, I
DS
=-1A
mΩ
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
2
www.anpec.com.tw
APM2701C
Electrical Characteristics (Cont.)
Symbol
Parameter
(T
A
= 25°C unless otherwise noted)
APM2701C
Min.
Typ.
Max.
Test Condition
Unit
Static Characteristics (Cont.)
V
SD
a
Diode Forward Voltage
b
I
SD
=0.5A, V
GS
=0V
I
SD
=-0.5A, V
GS
=0V
N-Ch
P-Ch
0.7
-0.7
1.3
-1.3
V
Dynamic Characteristics
C
iss
Input Capacitance
N-Channel
V
GS
=0V,
V
DS
=20V,
Frequency=1.0MHz
P-Channel
V
GS
=0V,
V
DS
=-20V,
Frequency=1.0MHz
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
260
300
55
50
40
30
6
6
5
8
12
10
6
5
12
10
10
12
23
15
12
10
ns
pF
C
oss
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
C
rss
t
d(ON)
T
r
Turn-on Rise Time
N-Channel
V
DD
=10V, R
L
=10Ω,
I
DS
=1A, V
GEN
=4.5V,
R
G
=6Ω
P-Channel
V
DD
=-10V, R
L
=10Ω,
I
DS
=-1A, V
GEN
=-4.5V,
R
G
=6Ω
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
t
d(OFF)
Turn-off Delay Time
T
f
Turn-off Fall Time
b
Gate Charge Characteristics
Q
g
Total Gate Charge
N-Ch
N-Channel
V
DS
=10V, V
GS
=4.5V,
I
DS
=3A
P-Channel
V
DS
=-10V, V
GS
=-4.5V,
I
DS
=-1.5A
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
5
4
0.7
0.6
0.7
0.7
6.5
6
nC
Q
gs
Gate-Source Charge
Q
gd
Notes:
Gate-Drain Charge
a : Pulse test ; pulse width
≤300µs,
duty cycle
≤
2%.
b : Guaranteed by design, not subject to production testing.
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
3
www.anpec.com.tw
APM2701C
Typical Characteristics
N-Channel
Power Dissipation
1.0
3.5
3.0
0.8
2.5
2.0
1.5
1.0
0.5
0.0
0.0
Drain Current
0.6
0.4
0.2
0
20
40
60
80 100 120 140 160
I
D
- Drain Current (A)
P
tot
- Power (W)
0
20
40
60
80 100 120 140 160
T
j
- Junction Temperature (°C)
T
j
- Junction Temperature (°C)
Safe Operation Area
Normalized Transient Thermal Resistance
50
2
1
Thermal Transient Impedance
10
I
D
- Drain Current (A)
R
(
ds
)
on
m
Li
it
Duty = 0.5
0.2
0.1
300
µ
s
1
1ms
10ms
100ms
1s
DC
0.1
0.05
0.02
0.01
Single Pulse
Mounted on 1in pad
o
R
θ
JA
: 150 C/W
2
0.1
0.01
0.1
T
A
=25 C
1
10
100
o
0.01
1E-4
1E-3
0.01
0.1
1
10 30
V
DS
- Drain - Source Voltage (V)
Square Wave Pulse Duration (sec)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
4
www.anpec.com.tw
APM2701C
Typical Characteristics (Cont.)
Output Characteristics
12
V
GS
= 3,4,5,6,7,8,9,10V
10
2.5V
Drain-Source On Resistance
0.14
0.12
V
GS
=2.5V
R
DS(ON)
- On - Resistance (Ω)
I
D
- Drain Current (A)
0.10
0.08
0.06
0.04
0.02
0.00
8
6
2V
4
V
GS
=4.5V
2
1.5V
0
0
1
2
3
4
5
0
2
4
6
8
10
V
DS
- Drain - Source Voltage (V)
I
D
- Drain Current (A)
Transfer Characteristics
10
9
8
1.8
Gate Threshold Voltage
I
DS
=250
µ
A
1.6
Normalized Threshold Voltage
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50 -25
I
D
- Drain Current (A)
7
6
5
4
3
2
1
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
T
j
=125 C
o
o
T
j
=25 C
T
j
=-55 C
o
0
25
50
75
100 125 150
V
GS
- Gate - Source Voltage (V)
T
j
- Junction Temperature (°C)
Copyright
ANPEC Electronics Corp.
Rev. B.1 - Mar., 2005
5
www.anpec.com.tw
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