2 WATT C-BAND
POWER GaAs MESFET
FEATURES
• CLASS A OPERATION
• HIGH EFFICIENCY:
η
ADD
≥
39% TYP
• BROADBAND CAPABILITY
• PACKAGE OPTIONS:
Chip
Hermetic Package
• PARTIALLY MATCHED INPUT FOR PACKAGED
DEVICES
• PROVEN RELIABILITY
NE8500200
NE8500295-4
NE8500295-6
NE8500295-8
PART
NUMBER
NE85002
SERIES
SELECTION CHART
TYPICAL PERFORMANCE
FREQUENCY
G
L
RANGE
(dBm)
(GHz)
(dB)
P
OUT
33.8 MIN
33.8 MIN
33.8 MIN
33.5 MIN
2.0 to 10
3.5 to 4.5
5.5 to 6.5
7.5 to 8.5
8.0 MIN
10.5 MIN
9.5 MIN
8.0 MIN
DESCRIPTION
The NE8500295 power GaAs FET covers the 3.5 to 8.5 GHz
frequency range with three different Class A, 2 W partially
matched devices. Each packaged device has an input lumped
element matching network.
The NE8500200 is the six-cell recessed gate chip used in the
"95" package. The device incorporates a Ti-Al gate structure,
SiO
2
glassivation and plated heat sink technology.
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
DSS
V
P
g
m
BV
GDO
I
GS
R
TH
P
TEST2
NE8500200
1
00 (CHIP)
NE8500295-4
95
NE8500295-6
95
NE8500295-8
95
TYP MAX
1900
-1.0
600
18
2.4
15
-2.4
2.4
15
PARAMETERS AND CONDITIONS UNITS MIN
Saturated Drain Current
V
DS
= 2.5 V, V
GS
= 0 V
Pinch-off Voltage
V
DS
= 2.5 V, I
D
= 8 mA
Transconductance
V
DS
= 2.5 V, I
D
= I
DSS
Drain-Gate Breakdown Voltage
I
GD
= 8 mA
Gate to Source Current, V
DS
= 10 V,
I
DSQ
= 450 mA, P
OUT
= P
TEST
Power Output at Test Point
V
DS
= 10 V, I
DS
= 450 mA set
P
IN
= 27.0 dBm
P
IN
= 24.5 dBm
P
IN
= 25.5 dBm
Linear Gain
V
DS
= 10 V, I
DS
= 450 mA
Power Added Efficiency
at P
TEST
mA
V
mS
V
mA
18
-2.4
950
-3.0
TYP MAX MIN
1900
-1.0
600
18
2.4
10
15
-2.4
950
-3.0
TYP MAX MIN
1900
-1.0
600
18
2.4
15
-2.4
950
-3.0
TYP MAX MIN
1900
-1.0
600
950
-3.0
Thermal Resistance (Channel-to-Case)
°C/W
dBm
dBm
dBm
33.8
33.8
33.8
33.5
G
L
η
ADD3
dB
%
8.0
9.0
42
10.5
47
9.5
45
8.0
39
Notes:
1. Six-cell chip: all cells are used. RF performance of the chip is
determined by packaging 10 chips per wafer. Wafer rejection
criteria for standard devices are 2 rejects per 10 samples.
2. This is a production test. Test frequencies are: -4 @ 4.2 GHz,
-6 @ 6.5 GHz, -8 and NE8500200 @ 8.5 GHz.
P
OUT
- P
IN
3.
η
ADD = V
DS
- I
D
x 100%
California Eastern Laboratories
NE85002 SERIES
ABSOLUTE MAXIMUM RATINGS
(T
C
= 25°C)
SYMBOLS
V
DS
V
GD
V
GS
I
D
I
G
T
CH
T
STG
P
T
PARAMETERS
Drain to Source Voltage
Gate to Drain
Gate to Source Voltage
Drain Current
Gate Current
Channel Temperature
Storage Temperature
Total power Dissipation
UNITS
V
V
V
A
mA
°C
°C
W
RATINGS
15
-18
-12
2.5
13
175
-65 to +175
13
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
DS
T
C
G
COMP
Rg
PARAMETERS
Drain to Source Voltage
Channel Temperature
Input Power
Gate Resistance
UNITS
V
°C
dB
COMP
kΩ
1
MIN
9
TYP
MAX
10
130
3
2
NE8500295-6
LARGE SIGNAL IMPEDANCES
FREQUENCY
GHz
5.90
6.20
6.40
6.50
Z
IN
Ω
13.16 - j44.75
22.77 - j59.68
149.70 - j73.98
43.58 - j56.13
Z
OUT
Ω
11.48 - j21.52
16.16 - j25.02
23.44 - j40.36
12.87 - j11.86
Z
IN
is the impedance of the input matching circuit as seen by the gate.
Z
OUT
is the impedance of the output matching circuit as seen by the
drain.
TYPICAL PERFORMANCE CURVE
(T
C
= 25°C)
POWER DERATING CURVE
12
OUTPUT POWER vs. INPUT POWER
40
Total Power Dissipation, P
T
(W)
Output Power, P
OUT
(dBm)
30
-4
-6
-8
20
8
4
10
0
0
50
100
150
200
0
0
5
10
15
20
25
30
35
40
Case Temperature, T
C
(°C)
Input Power, P
IN
(dBm)
NE85002 SERIES
TYPICAL SCATTERING PARAMETERS
(T
C
= 25°C)
+90˚
+120˚
+60˚
+30˚
S
22
10 GHz
+150˚
S
21
0.1 GHz
S
21
10 GHz
S
22
0.1 GHz
±180˚
0˚
S
12
0.1 GHz
S
11
10 GHz
S
11
0.1 GHz
-150˚
-30˚
S
12
10 GHz
-60˚
-90˚
-120˚
NE8500295-6
V
DS
= 10 V, I
DS
= 450 mA
FREQUENCY
(GHz)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.963
0.952
0.947
0.963
0.956
0.949
0.948
0.898
0.876
0.847
0.813
0.737
0.560
0.264
0.344
0.539
0.623
0.637
0.610
0.574
0.514
ANG
-59.200
-149.100
-173.800
172.900
161.800
150.900
140.700
138.500
128.200
116.000
101.800
85.400
69.800
73.200
127.700
117.600
90.700
53.500
16.000
-16.900
-55.800
MAG
S
21
ANG
MAG
0.003
0.016
0.017
0.018
0.021
0.022
0.029
0.031
0.036
0.041
0.048
0.054
0.057
0.046
0.023
0.013
0.038
0.075
0.096
0.099
0.090
16.698 149.400
5.714
97.600
3.033
74.200
2.152
56.400
1.701
41.000
1.472
26.000
1.328
11.300
1.164
0.700
1.168
-13.300
1.278
-28.700
1.432
-47.900
1.648
-71.000
1.926
-99.800
2.118 -137.200
1.924 -176.300
1.625 151.000
1.406 119.500
1.163
84.600
0.868
52.600
0.676
25.900
0.561
-0.600
S
12
ANG
29.700
22.800
20.000
17.400
22.200
21.200
20.600
17.400
11.000
4.800
-6.900
-23.900
-47.400
-82.700
-123.600
99.500
36.300
-1.900
-41.300
-69.300
-88.500
MAG
0.373
0.463
0.485
0.512
0.532
0.556
0.578
0.605
0.607
0.595
0.616
0.664
0.757
0.871
0.920
0.884
0.838
0.779
0.718
0.693
0.673
S
22
ANG
-169.500
-171.200
-179.300
177.700
173.900
172.700
170.500
168.000
163.200
158.400
152.300
146.000
140.000
131.200
120.200
110.200
95.900
74.700
56.000
47.000
43.200
K
0.408
0.377
0.769
0.653
0.859
1.018
0.806
1.547
1.554
1.529
1.250
1.072
0.966
1.101
1.866
3.241
1.283
1.035
1.653
2.524
3.931
MAG
1
(dB)
37.455
25.528
22.514
20.776
19.085
17.440
16.608
11.388
10.727
10.646
11.735
13.203
15.288
14.693
13.858
12.959
12.486
10.759
4.837
1.493
-0.936
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE85002 SERIES
TYPICAL SCATTERING PARAMETERS
(T
C
= 25°C)
+90˚
+120˚
+60˚
+30˚
S
22
10 GHz
+150˚
S
21
0.1 GHz
S
21
10 GHz
±180˚
S
22
0.1 GHz
S
11
10 GHz
S
12
0.1 GHz
0˚
S
11
0.1 GHz
-150˚
S
12
10 GHz
-30˚
-120˚
-90˚
-60˚
NE8500295-8
V
DS
= 10 V, I
DS
= 450 mA
FREQUENCY
(GHz)
0.1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
6.5
7.0
7.5
8.0
8.5
9.0
9.5
10.0
Note:
1. Gain Calculations:
MAG =
|S
21
|
|S
12
|
S
11
MAG
0.971
0.937
0.934
0.947
0.939
0.921
0.906
0.887
0.866
0.836
0.805
0.734
0.587
0.303
0.116
0.394
0.536
0.570
0.497
0.354
0.288
ANG
-54.800
-146.300
-174.000
170.900
158.300
153.800
145.400
137.000
126.200
113.900
98.800
80.200
57.400
23.500
-152.800
158.700
126.700
91.000
45.200
3.800
-34.500
MAG
S
21
ANG
MAG
0.004
0.016
0.018
0.020
0.026
0.023
0.027
0.034
0.041
0.044
0.056
0.065
0.073
0.075
0.063
0.042
0.025
0.033
0.069
0.067
0.068
S
12
ANG
35.400
24.000
22.300
20.800
28.100
22.700
20.900
19.900
10.200
6.000
-4.100
-18.900
-41.500
-69.900
-101.500
-134.100
165.800
49.500
-26.200
-59.800
-86.200
MAG
0.427
0.464
0.492
0.513
0.534
0.573
0.592
0.603
0.602
0.583
0.592
0.628
0.695
0.788
0.874
0.883
0.858
0.843
0.773
0.747
0.712
S
22
ANG
-155.900
-172.300
-178.900
177.400
173.300
169.500
168.100
165.700
160.300
155.200
149.200
142.800
138.700
133.400
125.700
115.900
102.200
81.500
59.800
51.700
46.800
K
MAG
1
(dB)
17.977 150.900
6.354
98.200
3.391
74.500
2.382
56.200
1.869
40.300
1.473
27.700
1.335
15.900
1.272
2.700
1.252 -11.100
1.343 -25.500
1.483 -43.600
1.658 -64.900
1.893 -90.600
2.124 -122.700
2.078 -159.400
1.824 167.500
1.587 137.200
1.413 103.500
1.105
66.600
0.787
38.600
0.622
17.000
0.030
0.452
0.821
0.811
0.954
1.495
1.570
1.497
1.423
1.556
1.211
1.074
0.948
0.925
1.015
1.421
2.264
1.665
1.861
3.631
5.336
36.527
25.989
22.751
20.759
18.566
13.906
12.501
11.563
10.984
10.456
11.454
12.409
14.138
14.521
14.431
12.522
11.697
11.551
6.692
2.173
-0.631
(
K
±
K
2
- 1
).
When K
≤
1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S
21
|
, K = 1 + |
∆
| - |S
11
| - |S
22
|
,
∆
= S
11
S
22
- S
21
S
12
|S
12
|
2 |S
12
S
21
|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
Embedded System
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