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DTC143TCA

Description
NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23
CategoryDiscrete semiconductor    The transistor   
File Size188KB,3 Pages
ManufacturerGalaxy Microelectronics
Environmental Compliance
Download Datasheet Parametric Compare View All

DTC143TCA Overview

NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23

DTC143TCA Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)100
Number of components1
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
surface mountYES
Transistor component materialsSILICON
Base Number Matches1
Production specification
Digital Transistor
FEATURES
Epitaxial planar die construction.
Complementary PNP types available(DTA).
Built-in biasing resistor,R
1
only.
Also available in lead free version.
DTC(R
1
-only SERIES)CA
Pb
Lead-free
APPLICATIONS
The NPN style digital transistor.
SOT-23
ORDERING INFORMATION
Type No.
DTC114TCA
DTC143TCA
DTC144TCA
Marking
04
03
06
Package Code
SOT-23
SOT-23
SOT-23
MAXIMUM RATING
@ Ta=25℃ unless otherwise specified
Symbol
V
CBO
V
CEO
V
EBO
I
C
(Max.)
P
D
R
θJA
T
j
,T
stg
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation
Thermal Resistance, Junction to Ambient Air
Operating and Storage and Temperature Range
Value
50
50
5
100
200
625
-55 to +150
Units
V
V
V
mA
mW
℃/W
C129
Rev.B
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1

DTC143TCA Related Products

DTC143TCA DTC114TCA DTC144TCA
Description NPN Bipolar Digital Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC Continuous (mA): 100mA; GI: 100; VO(ON) (V): 0.3V; FT (MHz): 250+ MHz; R1 (KΩ): 4.7K Ohm; R2 (KΩ): 0 Ohm; R1/R2 Typ: -; VI(OFF) Max (V): 0.5V; VI(ON) Min (V): 3V; PTOT (mW): 200mW; Package: SOT-23 50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 0.1V, 250(typ), 10kΩ 50V,100mA,NPN Bipolar Digital Transistor, Diodes, NPN, 50V, 100mA, 0.1V, 250(typ), 47kΩ
Is it Rohs certified? conform to conform to conform to
Reach Compliance Code unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 100 100 100
Number of components 1 1 1
Polarity/channel type NPN NPN NPN
Maximum power dissipation(Abs) 0.2 W 0.2 W 0.2 W
surface mount YES YES YES
Transistor component materials SILICON SILICON SILICON
Maker - Galaxy Microelectronics Galaxy Microelectronics
polarity - NPN NPN
V(BR)CEO (V) min. - 50 50
IC Continuous (mA) - 100 100
VO(ON) (V) - 0.1 0.1
fT MHz - 250(typ) 250(typ)
R1 (kΩ) - 10 47
Vi(off) (V) max. - 0.5 0.3
Vi(on) (V) min. - 3 1.4
PD (mW) - 200 200
AEC Qualified - No No
Maximum operating temperature - 150 150
Minimum operating temperature - -55 -55
MSL level - 1 1
Is it lead-free? - Yes Yes
Comply with Reach - Yes Yes
RoHS compliant - Yes Yes
ECCN code - EAR99 EAR99
Package Outlines - SOT-23 SOT-23

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Index Files: 150  1941  140  2770  48  4  40  3  56  1 
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