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BD107C

Description
Power Bipolar Transistor, 2.5A I(C), 64V V(BR)CEO, 1-Element, NPN, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size67KB,1 Pages
ManufacturerTT Electronics plc
Websitehttp://www.ttelectronics.com/
Download Datasheet Parametric View All

BD107C Overview

Power Bipolar Transistor, 2.5A I(C), 64V V(BR)CEO, 1-Element, NPN, Silicon

BD107C Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
package instruction,
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)2.5 A
Collector-emitter maximum voltage64 V
ConfigurationSINGLE
Minimum DC current gain (hFE)250
Number of components1
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)100 MHz
Base Number Matches1

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