High-reliability discrete products
and engineering services since 1977
FEATURES
MCR218 SERIES
SILICON CONTROLLED RECTIFIERS
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
Rating
Symbol
Value
Unit
MAXIMUM RATINGS
.
Peak repetitive off-state voltage
(1)
(T
J
= -40 to +125°C, gate open)
MCR218-2
MCR218-3
MCR218-4
MCR218-6
MCR218-7
MCR218-8
MCR218-10
On-state RMS current
(180° conduction angles, T
C
= 70°C)
Peak non-repetitive surge current
(one half-cycle, sine wave, 60Hz, T
J
= 125°C)
Circuit fusing consideration
(t = 8.3ms)
Forward peak gate power
(pulse width ≤ 1.0µs, T
C
= 70°C)
Forward average gate power
(t = 8.3ms, T
C
= 70°C)
Forward peak gate current
(pulse width ≤ 1.0µs, T
C
= 70°C)
Operating temperature range
Storage temperature range
V
DRM
V
RRM
50
100
200
400
500
600
800
8.0
100
26
5
0.5
2.0
-40 to +125
-40 to +150
V
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
A
A
A
2
s
W
W
A
°C
°C
Note 1: V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; positive gate voltage shall not be applied concurrent with negative potential on the
anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Maximum lead temperature for soldering purposes
1/8” from case for 10s
Symbol
R
ӨJC
T
L
Maximum
2.0
260
Unit
°C/W
°C
ELECTRICAL CHARACTERISTICS
(T
C
= 25°C unless otherwise specified)
Characteristic
OFF CHARACTERISTICS
Peak forward or reverse blocking current
(V
AK
= Rated V
DRM
or V
RRM
, gate open)
T
J
= 25°C
T
J
= 125°C
ON CHARACTERISTICS
Peak on-state voltage
*
(I
TM
= 16A peak)
Gate trigger current
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
Gate trigger voltage
(continuous dc)
(V
D
= 12V, R
L
= 100Ω)
V
TM
I
GT
V
GT
-
-
-
1.5
10
-
1.8
25
1.5
V
mA
V
I
DRM,
I
RRM
Symbol
Min
Typ
Max
Unit
-
-
-
-
10
2.0
µA
mA
Rev. 20130115
High-reliability discrete products
and engineering services since 1977
Gate non-trigger voltage
(Rated 12V, R
L
= 100Ω, T
J
= 125°C)
Holding current
(V
D
= 12V, initiating current = 200mA, gate open)
DYNAMIC CHARACTERISTICS
Critical rate of rise of off-state voltage
(V
D
= rated V
DRM
, exponential waveform, gate open, T
J
= 125°C)
* Pulse width ≤ 1.0ms, duty cycle ≤ 2%.
MCR218 SERIES
V
GD
I
H
0.2
-
-
16
SILICON CONTROLLED RECTIFIERS
-
30
V
mA
dv/dt
-
100
-
V/µs
MECHANICAL CHARACTERISTICS
Case:
Marking:
Pin out:
TO-220AB
Body painted, alpha-numeric
See below
Rev. 20130115
Embedded System
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