SB1635CT datasheet, PDF - EEWORLD Datasheet

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SB1635CT: DescriptionRectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 35V V(RRM), Silicon, TO-220AB,; CategoryDiscrete semiconductor diode; File Size101KB，2 Pages; ManufacturerGulf Semiconductor; Websitehttp://www.gulfsemi.com/

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SB1635CT Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 35V V(RRM), Silicon, TO-220AB,

SB1635CT Parametric

Parameter Name	Attribute value
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW POWER LOSS
application	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	0.65 V
JEDEC-95 code	TO-220AB
JESD-30 code	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A
Number of components	2
Phase	1
Number of terminals	3
Maximum operating temperature	125 °C
Minimum operating temperature	-40 °C
Maximum output current	8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Maximum repetitive peak reverse voltage	35 V
Maximum reverse current	1000 µA
surface mount	NO
technology	SCHOTTKY
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Base Number Matches	1

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SB1620CT THRU SB1660CT

SCHOTTKY BARRIER

RECTIFIER

VOLTAGE: 20 TO 60V

CURRENT: 16.0A

FEATURE

High current capability, Low forward voltage drop

Low power loss, high efficiency

High surge capability

High temperature soldering guaranteed

250° /10sec/0.375" lead length at 5 lbs tension

TO-220AB

MECHANICAL DATA

Terminal: Plated axial leads solderable per

MIL-STD 202E, method 208C

Case: Molded with UL-94 Class V-0 recognized Flame

Retardant Epoxy

Polarity: Common Cathode

Mounting position: any

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)

SYMBOL

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC blocking Voltage

Maximum Average Forward Rectified

Current

Peak Forward Surge Current 8.3ms single

half sine-wave superimposed on rated load

Maximum Forward Voltage at 8.0A

Maximum DC Reverse Current

at rated DC blocking voltage

Typical Junction Capacitance

Typical Thermal Resistance

Operating Junction Temperature

Storage Temperature Ramge

Ta =25°C

Ta =100°C

(Note 1)

(Note 2)

Vrrm

Vrms

Vdc

If(av)

Ifsm

R(ja)

Tstg

SB16

20CT

SB16

30CT

SB16

35CT

SB16

40CT

150

SB16

45CT

SB16

50CT

SB16

60CT

units

0.65

1.0

30.0

700

3.0

-40 to +125

-65 to +150

0.75

50.0

500

-50 to +150

C/W

Note:

1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc

2. Thermal Resistance from Junction to Case

Rev.A5

www.gulfsemi.com

SB1635CT Related Products

	SB1635CT	SB1630CT
Description	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 35V V(RRM), Silicon, TO-220AB,	Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 30V V(RRM), Silicon, TO-220AB,
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	LOW POWER LOSS	LOW POWER LOSS
application	EFFICIENCY	EFFICIENCY
Configuration	COMMON CATHODE, 2 ELEMENTS	COMMON CATHODE, 2 ELEMENTS
Diode component materials	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE
Maximum forward voltage (VF)	0.65 V	0.65 V
JEDEC-95 code	TO-220AB	TO-220AB
JESD-30 code	R-PSFM-T3	R-PSFM-T3
Maximum non-repetitive peak forward current	150 A	150 A
Number of components	2	2
Phase	1	1
Number of terminals	3	3
Maximum operating temperature	125 °C	125 °C
Minimum operating temperature	-40 °C	-40 °C
Maximum output current	8 A	8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Maximum repetitive peak reverse voltage	35 V	30 V
Maximum reverse current	1000 µA	1000 µA
surface mount	NO	NO
technology	SCHOTTKY	SCHOTTKY
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Base Number Matches	1	1

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