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SB1630CT

Description
Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 30V V(RRM), Silicon, TO-220AB,
CategoryDiscrete semiconductor    diode   
File Size101KB,2 Pages
ManufacturerGulf Semiconductor
Websitehttp://www.gulfsemi.com/
Download Datasheet Parametric Compare View All

SB1630CT Overview

Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 30V V(RRM), Silicon, TO-220AB,

SB1630CT Parametric

Parameter NameAttribute value
package instructionR-PSFM-T3
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresLOW POWER LOSS
applicationEFFICIENCY
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.65 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature125 °C
Minimum operating temperature-40 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage30 V
Maximum reverse current1000 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Base Number Matches1
SB1620CT THRU SB1660CT
SCHOTTKY BARRIER
RECTIFIER
VOLTAGE: 20 TO 60V
CURRENT: 16.0A
FEATURE
High current capability, Low forward voltage drop
Low power loss, high efficiency
High surge capability
High temperature soldering guaranteed
250° /10sec/0.375" lead length at 5 lbs tension
C
TO-220AB
MECHANICAL DATA
Terminal: Plated axial leads solderable per
MIL-STD 202E, method 208C
Case: Molded with UL-94 Class V-0 recognized Flame
Retardant Epoxy
Polarity: Common Cathode
Mounting position: any
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(single-phase, half-wave, 60HZ, resistive or inductive load rating at 25°C, unless otherwise stated)
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC blocking Voltage
Maximum Average Forward Rectified
Current
Peak Forward Surge Current 8.3ms single
half sine-wave superimposed on rated load
Maximum Forward Voltage at 8.0A
Maximum DC Reverse Current
at rated DC blocking voltage
Typical Junction Capacitance
Typical Thermal Resistance
Operating Junction Temperature
Storage Temperature Ramge
Ta =25°C
Ta =100°C
(Note 1)
(Note 2)
Vrrm
Vrms
Vdc
If(av)
Ifsm
Vf
Ir
Cj
R(ja)
Tj
Tstg
SB16
20CT
20
14
20
SB16
30CT
30
21
30
SB16
35CT
35
25
35
SB16
40CT
40
28
40
16
150
SB16
45CT
45
32
45
SB16
50CT
50
35
50
SB16
60CT
60
42
60
units
V
V
V
A
A
0.65
1.0
30.0
700
3.0
-40 to +125
-65 to +150
0.75
50.0
500
-50 to +150
V
mA
mA
pF
°
C/W
°
C
°
C
Note:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0Vdc
2. Thermal Resistance from Junction to Case
Rev.A5
www.gulfsemi.com

SB1630CT Related Products

SB1630CT SB1635CT
Description Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 30V V(RRM), Silicon, TO-220AB, Rectifier Diode, Schottky, 1 Phase, 2 Element, 8A, 35V V(RRM), Silicon, TO-220AB,
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Other features LOW POWER LOSS LOW POWER LOSS
application EFFICIENCY EFFICIENCY
Configuration COMMON CATHODE, 2 ELEMENTS COMMON CATHODE, 2 ELEMENTS
Diode component materials SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.65 V 0.65 V
JEDEC-95 code TO-220AB TO-220AB
JESD-30 code R-PSFM-T3 R-PSFM-T3
Maximum non-repetitive peak forward current 150 A 150 A
Number of components 2 2
Phase 1 1
Number of terminals 3 3
Maximum operating temperature 125 °C 125 °C
Minimum operating temperature -40 °C -40 °C
Maximum output current 8 A 8 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Maximum repetitive peak reverse voltage 30 V 35 V
Maximum reverse current 1000 µA 1000 µA
surface mount NO NO
technology SCHOTTKY SCHOTTKY
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Base Number Matches 1 1
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