DISCRETE SEMICONDUCTORS
DATA SHEET
k, halfpage
M3D102
BAP64-06W
Silicon PIN diode
Product specification
Supersedes data of 2001 Feb 02
2001 Apr 17
Philips Semiconductors
Product specification
Silicon PIN diode
FEATURES
•
High voltage, current controlled
•
RF resistor for RF attenuators and switches
•
Low diode capacitance
•
Low diode forward resistance
•
Low series inductance
•
For applications up to 3 GHz.
APPLICATIONS
•
RF attenuators and switches.
DESCRIPTION
Two planar PIN diodes in common anode configuration in
a SOT323 small SMD plastic package.
1
Top view
2
MGU320
BAP64-06W
PINNING
PIN
1
2
3
DESCRIPTION
cathode 1
cathode 2
common connection
handbook, halfpage
3
3
2
1
Marking code:
V4-.
Fig.1 Simplified outline (SOT323) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
Per diode
V
R
I
F
P
tot
T
stg
T
j
continuous reverse voltage
continuous forward current
total power dissipation
storage temperature
junction temperature
T
s
= 90
°C
−
−
−
−65
−65
100
100
240
+150
+150
V
mA
mW
°C
°C
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
2001 Apr 17
2
Philips Semiconductors
Product specification
Silicon PIN diode
ELECTRICAL CHARACTERISTICS
T
j
= 25
°C
unless otherwise specified.
SYMBOL
Per diode
V
F
I
R
C
d
forward voltage
reverse current
diode capacitance
I
F
= 50 mA
V
R
= 100 V
V
R
= 20 V
V
R
= 0; f = 1 MHz
V
R
= 1 V; f = 1 MHz
V
R
= 20 V; f = 1 MHz
r
D
diode forward resistance
I
F
= 0.5 mA; f = 100 MHz; note 1
I
F
= 1 mA; f = 100 MHz; note 1
I
F
= 10 mA; f = 100 MHz; note 1
I
F
= 100 mA; f = 100 MHz; note 1
|s
21
|
2
isolation
V
R
= 0; f = 900 MHz
V
R
= 0; f = 1800 MHz
V
R
= 0; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 0.5 mA; f = 900 MHz
I
F
= 0.5 mA; f = 1800 MHz
I
F
= 0.5 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 1 mA; f = 900 MHz
I
F
= 1 mA; f = 1800 MHz
I
F
= 1 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 10 mA; f = 900 MHz
I
F
= 10 mA; f = 1800 MHz
I
F
= 10 mA; f = 2450 MHz
|s
21
|
2
insertion loss
I
F
= 100 mA; f = 900 MHz
I
F
= 100 mA; f = 1800 MHz
I
F
= 100 mA; f = 2450 MHz
τ
L
charge carrier life time
when switched from I
F
= 10 mA to
I
R
= 6 mA; R
L
= 100
Ω;
measured at I
R
= 3 mA
I
F
= 100 mA; f = 100 MHz
PARAMETER
CONDITIONS
BAP64-06W
TYP.
MAX.
UNIT
0.95
−
−
0.52
0.37
0.23
20
10
2
0.7
18.5
13.5
10.9
1.86
2.06
2.23
1.01
1.06
1.10
0.19
0.21
0.27
0.08
0.10
0.16
1.55
1.1
10
1
−
−
0.35
40
20
3.8
1.35
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
V
µA
µA
pF
pF
pF
Ω
Ω
Ω
Ω
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
µs
L
S
Note
series inductance
1.6
−
nH
1. Guaranteed on AQL basis: inspection level S4, AQL 1.0.
THERMAL CHARACTERISTICS
SYMBOL
R
th j-s
PARAMETER
thermal resistance from junction to soldering point
VALUE
250
UNIT
K/W
2001 Apr 17
3
Philips Semiconductors
Product specification
Silicon PIN diode
GRAPHICAL DATA
BAP64-06W
handbook, halfpage
10
3
MLD596
handbook, halfpage
600
Cd
MLD597
rD
(Ω)
10
2
(fF)
400
10
200
1
10
−1
10
−1
1
10
IF (mA)
10
2
0
0
4
8
12
16
VR (V)
20
f = 100 MHz; T
j
= 25
°C.
f = 1 MHz; T
j
= 25
°C.
Fig.2
Forward resistance as a function of forward
current; typical values.
Fig.3
Diode capacitance as a function of reverse
voltage; typical values.
handbook, halfpage
s
2
0
MLD598
21
(dB)
−1
(1)
(2)
(3)
handbook, halfpage
s
2
0
MLD599
21
(dB)
−5
(4)
−2
−10
−3
−15
−4
−20
−5
0.5
(1) I
F
= 100 mA.
(2) I
F
= 10 mA.
1
1.5
2
2.5
f (GHz)
3
−25
0.5
1
1.5
2
2.5
f (GHz)
3
(3) I
F
= 1 mA.
(4) I
F
= 0.5 mA.
Diode zero biased and inserted in series with a 50
Ω
stripline circuit.
T
amb
= 25
°C.
Diode inserted in series with a 50
Ω
stripline circuit
and biased via the analyzer Tee network; T
amb
= 25
°C.
Fig.4
Insertion loss (|s
21
|
2
) of the diode as a
function of frequency; typical values.
Fig.5
Isolation (|s
21
|
2
) of the diode as a function
of frequency; typical values.
2001 Apr 17
4
Philips Semiconductors
Product specification
Silicon PIN diode
BAP64-06W
handbook, halfpage
150
MLD600
IP2
(dB)
100
1800 MHz
900 MHz
50
0
10
−1
1
IF (mA)
10
T
amb
= 25
°C;
typical values.
Fig.6
Second order intercept point as a function
of forward current; typical values.
2001 Apr 17
5
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