ZXTP25100BFH
100V, SOT23, PNP medium power transistor
Summary
BV
(BR)CEX
> -140V, BV
(BR)CEO
> -100V
BV
(BR)ECX
> -7V ;
I
C(cont)
= -2A
V
CE(sat)
< -130mV @ -1A
R
CE(sat)
= 108m
P
D
= 1.25W
Complementary part number ZXTN25100BFH
typical
Description
Advanced process capability and package design have been used to
maximize the power handling and performance of this small outline
transistor. The compact size and ratings of this device make it ideally
suited to applications where space is at a premium.
C
B
Features
•
•
•
•
•
High power dissipation SOT23 package
High peak current
Low saturation voltage
140V forward blocking voltaget
7V reverse blocking voltage
E
Applications
•
•
•
•
MOSFET and IGBT gate driving
DC - DC converters
Motor drive
Relay, lamp, and solenoid drive
Pinout - top view
Ordering information
Device
ZXTP25100BFHTA
Reel size
(inches)
7
Tape width
8mm
Quantity per reel
3,000
Device marking
056
Issue 1 - March 2006
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1
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ZXTP25100BFH
Absolute maximum ratings
Parameter
Collector-base voltage
Collector-emitter voltage (forward blocking)
Collector-emitter voltage
Emitter-collector voltage (reverse blocking)
Emitter-base voltage
Continuous collector current
(b)
Peak pulse current
Power dissipation at T
A
=25°C
(a)
Linear derating factor
Power dissipation at T
A
=25°C
(b)
Linear derating factor
Power dissipation at T
A
=25°C
(c)
Linear derating factor
Power dissipation at T
A
=25°C
(d)
Linear derating factor
Operating and storage temperature range
Symbol
V
CBO
V
CEX
V
CEO
V
ECX
V
EBO
I
C
I
CM
P
D
P
D
P
D
P
D
T
j
, T
stg
Limit
-140
-140
-100
-7
-7
-2
-5
0.73
5.84
1.05
8.4
1.25
9.6
1.81
14.5
-55 to 150
Unit
V
V
V
V
V
A
A
W
mW/°C
W
mW/°C
W
mW/°C
W
mW/°C
°C
Thermal resistance
Parameter
Junction to ambient
(a)
Junction to ambient
(b)
Junction to ambient
(c)
Junction to ambient
(d)
Symbol
R
JA
R
JA
R
JA
R
JA
Limit
171
119
100
69
Unit
°C/W
°C/W
°C/W
°C/W
NOTES:
(a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in
still air conditions.
(b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions.
(d) As (c) above measured at t<5secs.
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
2
www.zetex.com
ZXTP25100BFH
Characteristics
Issue 1 - March 2006
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3
www.zetex.com
ZXTP25100BFH
Electrical characteristics (at T
AMB
= 25°C unless otherwise stated)
Parameter
Collector-base breakdown
voltage
Collector-emitter
breakdown voltage
(forward blocking)
Collector-emitter
breakdown voltage (base
open)
Emitter-collector
breakdown voltage
(reverse blocking)
Emitter-base breakdown
voltage
Collector cut-off current
Collector emitter cut-off
current
Emitter cut-off current
Collector-emitter
saturation voltage
Symbol
BV
CBO
BV
CEX
Min.
-140
-140
Typ.
-165
-165
Max.
Unit
V
V
Conditions
I
C
= -100 A
I
C
= -100 A,
R
BE
< 1k or
-0.25V < V
BE
< 1V
I
C
= -10mA
(*)
BV
CEO
-100
-125
V
BV
ECX
-7
8.2
V
I
E
= -100 A,
R
BC
< 1k or
-0.25V < V
BC
< 0.25V
I
E
= -100 A
V
CB
= -112V
V
CB
= -112V, T
AMB
= 100°C
V
CE
= -112V;
R
BE
< 1k or
-0.25V < V
BE
< 1V
V
EB
= -5.6V
I
C
= -0.5A, I
B
= -50mA
(*)
I
C
= -0.5A, I
B
= -10mA
(*)
I
C
= -1A, I
B
= -100mA
(*)
I
C
= -2A, I
B
= -200mA
(*)
I
C
= -2A, I
B
= -200mA
(*)
I
C
= -2A, V
CE
= -2V
(*)
I
C
= -10mA, V
CE
= -2V
(*)
I
C
= -1A, V
CE
= -2V
(*)
I
C
= -2A, V
CE
= -2V
(*)
BV
EBO
I
CBO
I
CEX
-7
-8.2
<-1
-
-50
-20
-100
V
nA
A
nA
I
EBO
V
CE(sat)
<-1
-60
-240
-100
-215
-50
-90
-350
-130
-295
-1000
-950
300
nA
mV
mV
mV
mV
mV
mV
Base-emitter saturation
voltage
Base-emitter turn-on
voltage
Static forward current
transfer ratio
V
BE(sat)
V
BE(on)
h
FE
100
55
15
-900
-830
200
105
25
200
15
31
384
Transition frequency
Output capacitance
Turn-on time
Turn-off time
f
T
C
OBO
t
(on)
t
(off)
MHz
25
pF
ns
ns
2%.
I
C
= -100mA, V
CE
= -5V
f = 100MHz
V
CB
= -10V, f = 1MHz
(*)
V
CC
= -10V, I
C
= -500mA,
I
B1
= I
B2
= -50mA
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
4
www.zetex.com
ZXTP25100BFH
Typical characteristics
Issue 1 - March 2006
© Zetex Semiconductors plc 2006
5
www.zetex.com
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