BF245BRL datasheet, PDF - EEWORLD Datasheet

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BF245BRL: DescriptionTRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size252KB，5 Pages; ManufacturerON Semiconductor; Websitehttp://www.onsemi.cn

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BF245BRL Overview

TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226AA, 3 PIN, FET RF Small Signal

BF245BRL Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	ON Semiconductor
Parts packaging code	TO-92
package instruction	CASE 29-11, TO-226AA, 3 PIN
Contacts	3
Manufacturer packaging code	CASE 29-11
Reach Compliance Code	compliant
ECCN code	EAR99
Other features	EUROPEAN PART NUMBER
Configuration	SINGLE
Minimum drain-source breakdown voltage	30 V
Maximum drain current (ID)	0.1 A
FET technology	JUNCTION
highest frequency band	ULTRA HIGH FREQUENCY BAND
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	225
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

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ON Semiconductort

JFET VHF/UHF Amplifiers

N–Channel — Depletion

BF245A

BF245B

MAXIMUM RATINGS

Rating

Drain–Source Voltage

Drain–Gate Voltage

Gate–Source Voltage

Drain Current

Forward Gate Current

Total Device Dissipation @ T

= 25°C

Derate above 25°C

Storage Channel Temperature Range

3 DRAIN

Symbol

G(f)

stg

Value

±30

100

350

2.8

–65 to +150

3 DRAIN

Unit

Vdc

mAdc

mW/°C

°C

BF244A, BF244B

CASE 29–11, STYLE 22

TO–92 (TO–226AA)

GATE

STYLE 22

GATE

STYLE 23

BF245, BF245A,

BF245B, BF245C

CASE 29–11, STYLE 23

TO–92 (TO–226AA)

2 SOURCE

1 SOURCE

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

= 1.0

µAdc,

= 0)

Gate–Source

= 15 Vdc, I

= 200

µAdc)

BF245

(1)

BF245A,

BF245B,

BF245C

(BR)GSS

BF244A

(2)

BF244B

GS(off)

GSS

0.4

1.6

3.2

–0.5

—

7.5

2.2

3.8

7.5

–8.0

5.0

Vdc

nAdc

—

Vdc

Gate–Source Cutoff Voltage

= 15 Vdc, I

= 10 nAdc)

Gate Reverse Current

= 20 Vdc, V

= 0)

ON CHARACTERISTICS

Zero–Gate–Voltage Drain Current

= 15 Vdc, V

= 0)

BF245

(1)

BF245A,

BF245B,

BF245C

BF244A

(2)

BF244B

DSS

2.0

6.0

—

6.5

mAdc

1. On orders against the BF245, any or all subgroups might be shipped.

2. On orders against the BF244A, any or all subgroups might be shipped.

Semiconductor Components Industries, LLC, 2001

332

June, 2001 – Rev. 0

Publication Order Number:

BF245A/D

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