SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
•
•
•
•
High Voltage
Hermetic TO-18 Metal package.
Ideally suited for High Voltage Amplifier
and Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
TA = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
200V
200V
6V
500mA
500mW
2.86mW/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJA
Parameters
Thermal Resistance, Junction To Ambient
Max.
350
Units
°C/W
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8576
Issue 2
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise stated)
Symbols
V(BR)CEO
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector-Base
Breakdown Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Test Conditions
IC = 10mA
IC = 100µA
IE = 100µA
VCB = 150V
VCE = 150V
VEB = 5V
IC = 0.1mA
IB = 0
IE = 0
IC = 0
IE = 0
IB = 0
IC = 0
VCE = 1.0V
VCE = 10V
VCE = 10V
VCE = 10V
IB = 1.0mA
IB = 3mA
IB = 5mA
IB = 1.0mA
IB = 3mA
IB = 5mA
Min.
200
200
6
Typ
Max.
Units
V(BR)CBO
V(BR)EBO
ICBO
ICEO
IEBO
V
50
500
50
20
30
50
40
250
0.3
0.4
0.5
0.8
0.9
1.0
V
nA
hFE
(1)
Forward-current transfer
ratio
IC = 1.0mA
IC = 10mA
IC = 30mA
IC = 10mA
VCE(sat)
(1)
Collector-Emitter Saturation
Voltage
IC = 30mA
IC = 50mA
IC = 10mA
VBE(sat)
(1)
Base-Emitter Saturation
Voltage
IC = 30mA
IC = 50mA
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 20mA
f = 20MHz
VCB = 20V
f = 1.0MHz
VEB = 0.5V
f = 1.0MHz
IC = 50mA
IB1 = 10mA
IC = 50mA
VCC = 100V
VCC = 100V
IC = 0
IE = 0
VCE = 20V
50
200
MHz
Cobo
Output Capacitance
5
pF
35
Cibo
Input Capacitance
ton
Turn-On Time
100
ns
toff
Turn-Off Time
IB1 = - IB2 = 10mA
2.3
µS
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8576
Issue 2
Page 2 of 3
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
2
1
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
12.7 (0.500)
min.
5.33 (0.210)
4.32 (0.170)
Website:
http://www.semelab-tt.com
Document Number 8576
Issue 2
Page 3 of 3
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